Array substrate, manufacturing method of array substrate and display device

Abstract

The invention discloses an array substrate, a manufacturing method of the array substrate and a display device. The array substrate comprises a first pattern layer and a second pattern layer which are sequentially arranged on a substrate base plate. An organic insulating layer is arranged between the first pattern layer and the second pattern layer. The first pattern layer comprises a grid electrode of a thin film transistor, a grid line and data lines, wherein the grid electrode is connected with the grid line, the data lines are cut off through the grid line, and the data lines and the grid line are insulated and separated. The second pattern layer comprises a source electrode of the thin film transistor, a drain electrode of the thin film transistor and connection portions, wherein the source electrode is connected with the data lines, the data lines correspond to the connection portions respectively, and each connection portion is used for connecting the portions, located on the two sides of the grid line, of the corresponding data line. By means of the array substrate, the manufacturing method and the display device, the parasitic capacitance of the source electrode, the drain electrode and the grid electrode can be reduced, the overlap capacitance of the grid line and the data lines can be recued, and therefore the signal delay is reduced, the power consumption is lowered, and the residual image phenomenon can be eliminated.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a manufacturing method thereof, and a display device including the array substrate. Background technique [0002] Low-temperature polysilicon (LTPS) materials are widely used in high-performance liquid crystal display devices (LCD) and light-emitting diode display devices (AMOLED) due to their extremely high mobility. Moreover, the array substrate based on low-temperature polysilicon material can integrate the driving circuit on the glass substrate, which is beneficial to realize narrow frame design and low power consumption display. [0003] However, the low-temperature polysilicon semiconductor material itself has a large leakage current, which increases the degree of charge asymmetry when the display panel performs positive and negative frame inversion, and finally leads to afterimage phenomenon. In addition, the signal delay of the gate line a...

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Problems solved by technology

[0003] However, the low-temperature polysilicon semiconductor material itself has a large leakage current, which increases the degree of charge asymmetry when the display panel performs positive and negative frame inversion, which eventually leads to afterimage phenomenon

In addition, the signal delay of the gate line and the parasitic capacitance of the thin film transistor area will aggravate the afterimage phenomenon

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