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Double-terminal ESD integrated protection device with wide range, high current and high maintenance voltage and its preparation method

A high maintenance voltage and device protection technology, which is applied in the fields of electrical solid state devices, semiconductor/solid state device manufacturing, electrical components, etc. Compression, the effect of reducing production costs

Active Publication Date: 2018-04-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the withstand voltage of TVS devices with traditional structures is difficult to meet the conditions of use in high-voltage operating environments. For example, the mains 110V / 220V high-voltage AC lighting, the voltage of the general rectifier output terminal can be as high as 320-400 volts, ordinary TVS devices have long been Has broken down and cannot protect the chip

Method used

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  • Double-terminal ESD integrated protection device with wide range, high current and high maintenance voltage and its preparation method
  • Double-terminal ESD integrated protection device with wide range, high current and high maintenance voltage and its preparation method
  • Double-terminal ESD integrated protection device with wide range, high current and high maintenance voltage and its preparation method

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Embodiment 1

[0039] Embodiment 1 A double-terminal ESD integrated protection device with wide range, high current and high sustain voltage

[0040] This embodiment is a double-terminal ESD integrated protection device with a wide range of high current and high sustain voltage, such as figure 1 As shown, it includes:

[0041] The metal layer 1, the N+ substrate 100, the N- epitaxial layer 200, and the silicon dioxide layer 700 are sequentially provided from bottom to top. The top of the N-epitaxial layer 200 is provided with two symmetrical, penetrating silicon dioxide layers. In the P+ active region 600, a guard ring 301 is provided on the periphery of the P+ active region 600, and a field limiting ring 300 is symmetrically arranged on the periphery of the guard ring 301. The two P+ active regions 600 lead out two A metal electrode 800 is used as two electrodes of a double-terminal ESD integrated protection device.

[0042] The N− epitaxial layer 200 in this embodiment is formed by using...

Embodiment 2

[0045] Example 2 A preparation method of a double-terminal ESD integrated protection device with a wide range of high current and high sustain voltage

[0046] This embodiment provides a method for preparing an open-circuit protection integrated chip in Embodiment 1, comprising the following steps:

[0047] (1) An N- epitaxial layer 200 is epitaxially formed on the prepared N+ substrate 100 . Such as figure 2 As shown, in this embodiment, heavy doping diffusion or implantation of N-type material is first performed on the silicon wafer to form an N+ substrate 100, and then the doped layer or implanted layer on the back is ground away to obtain a substrate with better concentration and better Substrate with heat absorption and treatment effects, and then after the above substrate is chemical vapor polished, the N- epitaxial layer is grown by N- single crystal epitaxial growth on the N+ substrate 100, which is the voltage bearing layer 200, forming a drift area to withstand the ...

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Abstract

The invention discloses a double-terminal ESD integrated protection device with a wide range of high current and high maintenance voltage and a preparation method thereof, wherein the double-terminal ESD integrated protection device with a wide range of high current and high maintenance voltage is provided with metal layers in sequence from bottom to top, N+ substrate, N-epitaxial layer, silicon dioxide layer, two symmetrical P+ active regions penetrating through the silicon dioxide layer are arranged on the top of the N-epitaxial layer, and the periphery of each P+ active region is provided with A guard ring is provided with a field limiting ring on the periphery of the guard ring, two metal electrodes are drawn from the P+ type active region through the contact hole, and a metal field plate is provided on the silicon dioxide layer around the contact hole. The invention adopts two double-terminal integrated devices with back-to-back diode structure as a high-voltage ESD protection device, and has the advantages of simple structure, low cost, high voltage resistance and the like. The invention is suitable for ESD / ESO protection of devices under high voltage.

Description

technical field [0001] The invention belongs to the field of electronic protection, and relates to a diode for ESD protection, specifically a double-terminal ESD integrated protection device with a wide range of high current and high sustain voltage, and the invention also provides a kind of ESD integrated protection device. Preparation. Background technique [0002] With the continuous development of semiconductor technology, diodes are used more and more widely as protection devices, such as in the field of electronic communication technology, new energy, semiconductor lighting, environmental protection vehicles, solar energy, and even some traditional home appliances. The use of type diodes is growing geometrically (for example, the annual consumption of electronic ballasts designed by HVIC in developed countries is more than 500 million), especially as electronic products are becoming miniaturized, intelligent, systematic, and high-end The direction of density developme...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/04H01L21/77
Inventor 廖智赵建明黄平徐开凯赵国钟思翰王威胡兴微徐彭飞蒋澎湃陈勇夏建新
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA