SONOS memory structure and manufacturing method thereof
A memory and control gate technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of unstable data retention and easy data loss, to limit random charge transitions, improve reliability, Increases the effect of barrier barriers
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[0025] The SONOS memory structure of the present invention and its manufacturing method will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0026] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals,...
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