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SONOS memory structure and manufacturing method thereof

A memory and control gate technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of unstable data retention and easy data loss, to limit random charge transitions, improve reliability, Increases the effect of barrier barriers

Inactive Publication Date: 2015-05-13
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the data retention of the existing SONOS-structured memory is not stable at high temperature, and the main performance is that the data is easily lost

Method used

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  • SONOS memory structure and manufacturing method thereof
  • SONOS memory structure and manufacturing method thereof
  • SONOS memory structure and manufacturing method thereof

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Embodiment Construction

[0025] The SONOS memory structure of the present invention and its manufacturing method will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is represented, it should be understood that those skilled in the art can modify the present invention described here, and still realize the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0026] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals,...

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Abstract

The invention discloses a SONOS (Silicon Oxide Nitride Oxide Semiconductor) memory structure and a method for manufacturing the memory structure. The memory structure is characterized in that an acquisition charge layer in an existing technology is replaced with a barrier enhancement layer, and the barrier enhancement layer comprises multiple oxygen-enriched silicon nitride layers and silicon-enriched silicon nitride layers all which are staggered, so that multi-level energy levels are introduces, barriers are increased, electric charges are limited in random hopping, and the disadvantage of easily losing data is improved, and the reliability of the SONOS memory structure is increased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a SONOS memory structure and a manufacturing method thereof. Background technique [0002] Generally, semiconductor memories used to store data are classified into volatile memories and nonvolatile memories, volatile memories are prone to lose their data when power is interrupted, and nonvolatile memories can retain their data even when power is interrupted data. Non-volatile semiconductor memory is relatively small compared to other non-volatile storage technologies (eg, disk drives). Therefore, nonvolatile memories have been widely used in mobile communication systems, memory cards, and the like. [0003] Non-volatile memory (Non-Volatile Memory) can be realized by one of two main technologies of floating gate structure or SONOS (Silicon-Oxide-Nitride-Oxide-Silicon, SONOS for short) structure. The relatively thick tunnel oxide layer of the floating gate memory prov...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L21/8247H10B69/00
Inventor 周俊黄建冬洪齐元
Owner WUHAN XINXIN SEMICON MFG CO LTD
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