Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as short circuit of bonding materials, and achieve the effect of improving quality and reliability

Active Publication Date: 2015-05-20
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the manufacturing process subsequent to the process of bonding semiconductor elements, there is a problem that the overflowing bonding material falls off due to vibration or the like and causes problems such as short circuits.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment approach 1

[0021]

[0022] figure 1 A cross-sectional view showing a semiconductor module including the semiconductor device of the present embodiment is applied to an electronic device used in a high-temperature environment. The semiconductor device of the present embodiment includes: an insulating substrate 3 as an insulating substrate; a semiconductor element 1 to be bonded to the insulating substrate 3 ; and a sinterable bonding material 2 to bond the insulating substrate 3 and the semiconductor element 1 .

[0023] Insulating substrate 3 is bonded to heat sink 4 via solder 13 or a sinterable bonding material. The insulating substrate 3 has a circuit pattern on its surface. The circuit pattern on the surface of the insulating substrate 3 and the back electrode of the semiconductor element 1 are bonded by a sinterable bonding material 2 .

[0024] The heat dissipation plate 4 is fixed to the case 8 which becomes the outer contour of the semiconductor module with, for example, an a...

Embodiment approach 2

[0068]

[0069] image 3 A cross-sectional view showing a semiconductor module including the semiconductor device of the present embodiment is applied to an electronic device used in a high-temperature environment. The semiconductor device of the present embodiment includes a conductive substrate 5 , a semiconductor element 1 bonded to the conductive substrate 5 , and a sinterable bonding material 2 bonded to the conductive substrate 5 and the semiconductor element 1 . In addition, the conductive substrate 5 is a metal plate.

[0070] The back surface of the conductive substrate 5 (ie, the surface opposite to the surface bonded to the semiconductor element 1 ) is fixedly bonded to the insulating metal layer 6 having an insulating foil on the bottom surface.

[0071] Such as image 3 As shown, an electrode 9 is provided at one end of the conductive substrate 5 . In addition, an electrode 9 on the other end side of the conductive substrate 5 is connected to an electrode on ...

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Abstract

A manufacturing method of a semiconductor device according to the present invention includes the steps of (a) preparing an insulating or conductive substrate; (b) arranging a bonding material having sinterability in at least one bonding region of a principal surface of the substrate (i.e., insulating substrate); and (c) sintering the bonding material while a bonding surface to be subjected to bonding of at least one semiconductor element is brought into pressurized contact with the bonding material, and bonding the substrate (i.e., insulating substrate) and the semiconductor element together through the bonding material. The bonding region in the step (b) is inwardly positioned from the bonding surface (i.e., region) of the semiconductor element in plan view, and the bonding material is not protruded outwardly from the bonding surface of the semiconductor element in plan view even after the step (c).

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, in particular to a bonding method of semiconductor elements. Background technique [0002] In recent years, as environmental regulations have increased, there has been an increasing demand for electronic devices that take environmental issues into account (that is, electronic devices that achieve high quality, high efficiency, and energy saving). In particular, electronic equipment corresponding to high power is required for industrial equipment, drive control equipment for home appliances equipped with electric motors, on-board control equipment for electric vehicles and hybrid vehicles, railway vehicle control equipment, solar power generation control equipment, and the like. In addition, there is a demand for high efficiency and low loss in the operation of electronic equipment in a high-load environment (high-temperature environment). The so-called high-tem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/603H01L23/488
CPCH01L24/29H01L24/83H01L24/32H01L24/45H01L24/48H01L24/73H01L24/85H01L2224/04042H01L2224/29014H01L2224/29007H01L2224/29339H01L2224/29344H01L2224/29364H01L2224/29347H01L2224/45015H01L2224/45124H01L2224/32055H01L2224/32014H01L2224/32225H01L2224/32245H01L2224/48137H01L2224/48472H01L2224/73265H01L2224/83203H01L2224/8384H01L2224/92247H01L2924/13055H01L2924/13091H01L2924/351H01L2924/181H01L2924/15787H01L2924/00H01L2924/00012H01L2924/2076H01L2924/00014H01L2224/48247
Inventor 日野泰成
Owner MITSUBISHI ELECTRIC CORP
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