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Cerium-doped three-family silicon nitride luminescence film, preparation method and application thereof

A light-emitting thin film, silicon nitride technology, applied in chemical instruments and methods, light-emitting materials, semiconductor devices, etc.

Inactive Publication Date: 2015-05-27
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, cerium-doped group-III silicon nitride light-emitting films that can be applied to thin-film electroluminescent displays have not been reported yet.

Method used

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  • Cerium-doped three-family silicon nitride luminescence film, preparation method and application thereof
  • Cerium-doped three-family silicon nitride luminescence film, preparation method and application thereof
  • Cerium-doped three-family silicon nitride luminescence film, preparation method and application thereof

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preparation example Construction

[0031] The preparation method of the above-mentioned cerium-doped group-III silicon nitride luminescent film comprises the following steps:

[0032] Step S11, loading the substrate into the reaction chamber of the chemical vapor deposition equipment, and setting the vacuum degree of the reaction chamber to 1.0×10 -2 P a ~1.0×10 -3 P a .

[0033] In this embodiment, the substrate is indium tin oxide glass (ITO). It can be understood that in other embodiments, it can also be fluorine-doped tin oxide glass (FTO), aluminum-doped zinc oxide (AZO) or indium-doped glass. zinc oxide (IZO); the substrate was ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, dried with nitrogen and sent to the reaction chamber;

[0034] Preferably, the vacuum degree of the reaction chamber is 4.0×10 -3 Pa.

[0035] Step S12 , heat-treating the substrate at 600° C. to 800° C. for 10 minutes to 30 minutes.

[0036] Step S13, adjusting the temp...

Embodiment 1

[0070] The substrate is ITO glass, which is ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, air-dried with nitrogen, and sent to the reaction chamber of the equipment. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 4.0×10 -3 Pa; Then the substrate is heat-treated at 700°C for 20 minutes, and then the temperature is lowered to 500°C. Turn on the rotating motor, adjust the rotating speed of the substrate support to 300 rpm, and feed the organic source (DPM) 3 The molar ratio of Al, silane and tetrakis (2,2,6,6-tetramethyl-3,5-heptanedionate) cerium is 2:6:0.03, the carrier gas is argon, and the flow rate of argon is 10 sccm. Ammonia gas was introduced, and the flow rate of ammonia gas was 120 sccm, and the deposition of the film was started. Deposit the thickness of the film to 150nm, turn off the organic source and carrier gas, continue to pass the ammonia gas, the temperature drop...

Embodiment 2

[0076] The substrate is ITO glass, which is ultrasonically cleaned with toluene, acetone and ethanol for 5 minutes, then rinsed with distilled water, air-dried with nitrogen, and sent to the reaction chamber of the equipment. Use a mechanical pump and a molecular pump to evacuate the vacuum of the chamber to 1.0×10 -3 Pa; Then the substrate is heat-treated at 700°C for 10 minutes, and then the temperature is lowered to 250°C. Turn on the rotating motor, adjust the rotating speed of the substrate holder to 50 rpm, and feed the organic source (DPM) 3 The molar ratio of Al, silane and tetrakis (2,2,6,6-tetramethyl-3,5-heptanedionate) cerium is 2:6:0.06, the carrier gas is argon, and the flow rate of argon is 10 sccm. Ammonia gas was introduced, and the flow rate of the ammonia gas was 10 sccm, and the deposition of the film was started. Deposit the thickness of the film to 80nm, turn off the organic source and carrier gas, continue to pass the ammonia gas, the temperature drop...

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Abstract

The invention relates to a cerium-doped three-family silicon nitride luminescence film, which has a chemical formula of Me2Si6N10: xCe<3+>, wherein, x is greater than or equal to 0.01, and x is less than or equal to 0.05, Me2Si6N10 is a matrix, cerium element is an activation element, Me is at least one of Al, Ga, In and T1. In a photoluminescence spectrum of the cerium-doped three-family silicon nitride luminescence film, strong luminescence peaks of the cerium-doped three-family silicon nitride luminescence film are generated at 620nm, the cerium-doped three-family silicon nitride luminescence film can be used in a thin-film electroluminescence display, and the invention also provides a preparation method and an application of the cerium-doped three-family silicon nitride luminescence film.

Description

【Technical field】 [0001] The invention relates to a cerium-doped group III silicon nitride luminescent film, a preparation method thereof, a thin film electroluminescent device and a preparation method thereof. 【Background technique】 [0002] Thin film electroluminescent display (TFELD) has attracted widespread attention and developed rapidly due to its advantages such as active light emission, full solid state, impact resistance, fast response, large viewing angle, wide application temperature, and simple process. At present, the research of color and even full-color TFELD and the development of multi-band luminescent films are the development direction of this subject. However, cerium-doped group-III silicon nitride light-emitting films that can be applied to thin-film electroluminescent displays have not been reported yet. 【Content of invention】 [0003] Based on this, it is necessary to provide a cerium-doped group-III silicon nitride light-emitting thin film applicab...

Claims

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Application Information

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IPC IPC(8): C09K11/64C09K11/62H01L33/50
Inventor 周明杰陈吉星王平钟铁涛
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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