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Thin film transistor, display panel and manufacturing method thereof

A technology of thin-film transistors and manufacturing methods, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, and electrical solid-state devices, and can solve problems such as incomplete oxidation and display panels that cannot display normally

Active Publication Date: 2015-05-27
AU OPTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a thin film transistor, a display panel and a manufacturing method thereof, which can avoid the problem that the display panel cannot display normally due to incomplete oxidation of the existing aluminum thin film in the manufacturing process

Method used

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  • Thin film transistor, display panel and manufacturing method thereof
  • Thin film transistor, display panel and manufacturing method thereof
  • Thin film transistor, display panel and manufacturing method thereof

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Embodiment Construction

[0065] figure 1 is a schematic diagram of a display panel according to an embodiment of the present invention. figure 2 yes figure 1 A partial equivalent circuit diagram of the display panel of the embodiment. Please also refer to figure 1 as well as figure 2 The display panel of this embodiment includes a substrate 110 , and the substrate 110 includes a display area 52 and a peripheral area 54 located on the periphery of the display area 52 . A pixel array 100 is located in the display area 52 . The pixel array 100 has a plurality of pixel structures (not shown), and each pixel structure includes at least one thin film transistor T1, T2 and an organic light emitting diode OLED electrically connected to the at least one thin film transistor T1, T2. According to an embodiment of the present invention, the pixel array 100 further includes a plurality of scan lines SL, a plurality of data lines DL and a plurality of power lines PL, GL (such as figure 2 ), the power lines...

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Abstract

The invention discloses a thin film transistor (TFT), a display panel and a manufacturing method thereof. The thin film transistor comprises an oxide semiconductor layer, a grid insulation pattern, a grid, a metallic oxide insulating layer, an oxygen supply layer, a gate-source and a gate-drain. The oxide semiconductor layer comprises a gate-source area, a gate-drain area and a channel area; the channel area is located between the gate-source area and the gate-drain area. The grid insulation pattern is located on the channel area of the oxide semiconductor layer. The grid is located on the grid insulation pattern. The metallic oxide insulating layer covers the oxide semiconductor layer. The oxygen supply layer and the metallic oxide insulating layer are in contact. The grid and the gate-drain are located above the oxygen supply layer, and are respectively in electric connection with the gate-source and the gate-drain of the oxide semiconductor layer. In addition, the display panel including the TFT, and the manufacturing method of the TFT are also provided.

Description

technical field [0001] The invention relates to a thin film transistor, a display panel and a manufacturing method thereof. Background technique [0002] With the advancement of modern information technology, displays of various specifications have been widely used in the screens of consumer electronic products, such as mobile phones, notebook computers, digital cameras and personal digital assistants (Personal Digital Assistant, PDA) Wait. Among these displays, Liquid Crystal Display (LCD) and Organic Electro-luminescent Display (OELD or OLED) have the advantages of thinness and low power consumption, so they have become mainstream commodities in the market. . The manufacturing process of the LCD and the OLED includes arranging an array of semiconductor elements on a substrate, and the semiconductor elements include thin film transistors (Thin Film Transistor, TFT). [0003] As displays get higher resolution, thin film transistors get smaller in size. At present, a thin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L27/12H01L21/77
CPCH01L21/324H01L21/77H01L27/12H01L29/06H01L29/66742H01L29/786
Inventor 陈佳楷王培筠胡晋玮许庭毓黄雅琴
Owner AU OPTRONICS CORP
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