The invention discloses a thin film transistor (TFT), a display panel and a manufacturing method thereof. The thin film transistor comprises an oxide semiconductor layer, a grid insulation pattern, a grid, a metallic oxide insulating layer, an oxygen supply layer, a gate-source and a gate-drain. The oxide semiconductor layer comprises a gate-source area, a gate-drain area and a channel area; the channel area is located between the gate-source area and the gate-drain area. The grid insulation pattern is located on the channel area of the oxide semiconductor layer. The grid is located on the grid insulation pattern. The metallic oxide insulating layer covers the oxide semiconductor layer. The oxygen supply layer and the metallic oxide insulating layer are in contact. The grid and the gate-drain are located above the oxygen supply layer, and are respectively in electric connection with the gate-source and the gate-drain of the oxide semiconductor layer. In addition, the display panel including the TFT, and the manufacturing method of the TFT are also provided.