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Method for forming back plate

Active Publication Date: 2015-06-03
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The problem solved by the present invention is that the aluminum back plate formed by the method of the prior art is applied in the magnetron sputtering process, the quality of the film layer formed on the substrate is not high, and the cost of the magnetron sputtering process is high

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Embodiment Construction

[0035] After discovery and analysis, when the backplane formed by the method of the prior art is applied to the magnetron sputtering process, the quality of the film layer formed on the substrate is not high, and the reasons for the high cost of the magnetron sputtering process are as follows: (1) Using current technology The hardness of the back plate formed by the technical method is at most 100HV. Because the hardness of the back plate is not enough, the deformation rate will increase when it is applied in the magnetron sputtering process, which will cause uneven bombardment of the target, thus affecting the film formed on the substrate. layer quality. The uneven bombardment phenomenon will also reduce the utilization rate of the target material, thereby increasing the process cost. (2) The welding bonding rate of the back plate formed by the method of the prior art is not high. When the back plate is applied to the magnetron sputtering process, it is easy to cause the firs...

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Abstract

Disclosed is a method for forming a back plate. The method includes that a first bottom plate blank and a first cover plate blank are provided; the first bottom plate blank is subjected to forging to form a second bottom plate blank; the first cover plate blank is subjected to forging to form a second cover plate blank; the second bottom plate blank is subjected to annealing to form a bottom plate; the second cover plate blank is subjected to annealing to form a cover plate; the bottom plate and the cover plate are welded to form the back plate. By means of the method for forming the back plate, the back plate can be applied to a magnetron sputtering process, qualities of films formed on a substrate can be improved, and costs of the magnetron sputtering process are lowered.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming a backplane. Background technique [0002] In the magnetron sputtering process, the target assembly is composed of a target that meets the sputtering performance and a back plate with a certain strength. The back plate not only plays a supporting role in the target assembly, but also has the effect of conducting heat, so it is used for heat dissipation of the target in the magnetron sputtering process. Specifically: [0003] In the process of magnetron sputtering, the working environment of target components is relatively harsh. Its temperature is high (such as 300°C to 500°C), the target component is in a high-voltage electric field and a magnetic field with high magnetic field strength, and the front surface is at 10 -9 Under the high-vacuum environment of Pa, it is bombarded by various high-energy ions, causing the target to be sputtered, and the sputtered...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23P15/00
CPCB23P15/00C23C14/3414
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽杨广
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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