Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacturing method thereof

A semiconductor and insulator technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as multiple areas, and achieve the effect of reducing the area

Active Publication Date: 2018-05-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared to planar devices such as MOSFETs, the isolation between FinFETs takes up more area because each isolation requires two dummy gates.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0012] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided are a semiconductor device and a manufacturing method thereof. An example apparatus may include a semiconductor-on-insulator (SOI) substrate, and first and second semiconductor devices formed on the SOI substrate. The first semiconductor device may include a first gate stack and a first gate spacer on a sidewall of the first gate stack, and the second semiconductor device may include a second gate stack and a second gate sidewall on a sidewall of the second gate stack. wall. The device may further include a dummy gate spacer formed between the first semiconductor device and the second semiconductor device and an isolation part self-aligned to a space defined by the dummy gate spacer, the isolation part separating the first semiconductor device and the second semiconductor device. The second semiconductor device is electrically isolated.

Description

technical field [0001] The present disclosure generally relates to the field of integrated circuit fabrication, and more particularly, to a semiconductor device including an isolation portion that can reduce area overhead and a fabrication method thereof. Background technique [0002] With the increasing demand for multifunctional, miniaturized electronic devices, it is expected to integrate more and more devices on a wafer. However, as current devices have been miniaturized to the physical limit, it is increasingly difficult to further reduce the average area per device. Additionally, any area overhead may result in increased manufacturing costs. [0003] One of solutions to meet the miniaturization trend is a three-dimensional device, such as a FinFET (Fin Field Effect Transistor). In FinFETs, the area occupied on the wafer surface is reduced by scaling in the height direction. However, compared to planar devices such as MOSFETs, the isolation between FinFETs takes up m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L21/84
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI