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Detection substrate, preparation method thereof, and detector

A technology for detecting substrates and substrate substrates, which is applied in the field of detection, can solve problems such as the detection substrate’s reduced utilization efficiency of light, and achieve the effect of improving utilization efficiency

Inactive Publication Date: 2015-06-03
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the above problems, the present invention provides a detection substrate and its preparation method, and a detector, which is used to solve the problem that the detection substrate in the prior art arranges the scintillation layer above the thin film transistor and the PIN photodiode, which causes the detection substrate to use light. The problem of reduced efficiency

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  • Detection substrate, preparation method thereof, and detector
  • Detection substrate, preparation method thereof, and detector
  • Detection substrate, preparation method thereof, and detector

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Embodiment 2

[0033] image 3 It is a schematic structural diagram of another detection substrate provided in Embodiment 2 of the present invention. Such as image 3 As shown, the detection substrate includes a base substrate 101, a thin film transistor, a PIN photodiode and a scintillation layer 103, and the thin film transistor includes a gate 104, an active layer 106, a source 107 and a drain 108, and the thin film The transistor and the PIN photodiode are disposed on the first surface of the base substrate 101 , and the scintillation layer 103 is disposed on the second surface of the base substrate 101 . It should be noted that, in this embodiment, the drain 108 of the thin film transistor is equivalent to the anode of the PIN photodiode.

[0034] In practical application, the scintillator layer 103 is made of scintillator material, for example, Gd 2 o 2 S, CsI or HgI composition. The function of the scintillation layer 103 is to convert the absorbed high-energy particles or rays i...

Embodiment 3

[0042] This embodiment provides a detector, including the detection substrate provided in Embodiment 1 or Embodiment 2 above. Regarding the specific content of the detection substrate, reference may be made to the description in the first embodiment or the second embodiment above, which will not be repeated here.

[0043] In the detector provided in this embodiment, the detection substrate includes a base substrate, a thin film transistor, a PIN photodiode, and a scintillation layer, and the thin film transistor and the PIN photodiode are arranged on the first surface of the base substrate, The scintillation layer is disposed on the second surface of the base substrate. The X-rays directly irradiate the PIN photodiode after passing through the base substrate with high transmittance, so as to avoid weakening of the light intensity irradiated to the PIN photodiode, thereby improving the light utilization efficiency of the detection substrate.

Embodiment 4

[0045] Figure 4 It is a flow chart of a method for preparing a detection substrate provided in Embodiment 4 of the present invention. Such as Figure 4 Shown, described preparation method comprises:

[0046] Step 4001, forming a thin film transistor and a PIN photodiode on the first surface of the substrate, the thin film transistor including a gate, an active layer, a source and a drain.

[0047] Step 4002, forming a scintillation layer on the second surface of the base substrate.

[0048] see figure 2 , the detection substrate includes a base substrate 101, a thin film transistor, a PIN photodiode and a scintillation layer 103, the thin film transistor includes a gate 104, an active layer 106, a source 107 and a drain 108, and the thin film transistor and The PIN photodiode is disposed on the first surface of the base substrate 101 , and the scintillation layer 103 is disposed on the second surface of the base substrate 101 . It should be noted that, in this embodimen...

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Abstract

The invention provides a detection substrate, a preparation method thereof, and a detector. The detection substrate comprises a substrate, a thin film transistor, a PIN photoelectric diode and a scintillating layer; the thin film transistor and the PIN photoelectric diode are arranged on the first surface of the substrate; the scintillating layer is arranged on the second surface of the substrate. X rays directly irradiate the PIN photoelectric diode after transmitting the substrate with higher transmittance, so that the light intensity which irradiates the PIN photoelectric diode is prevented from weakening; therefore, the light utilization rate of the detection substrate is improved.

Description

technical field [0001] The invention relates to the technical field of detection, in particular to a detection substrate, a preparation method thereof, and a detector. Background technique [0002] figure 1 It is a structural schematic diagram of a detection substrate in the prior art. Such as figure 1 As shown, the detection substrate includes a base substrate 101, and a thin film transistor is arranged on the base substrate 101, and the thin film transistor includes a gate 104, an insulating layer 105, an active layer 106, a source 107 and a drain 108. A PIN photodiode 102 is disposed above the source 107 and the drain 108 . A passivation layer 109 is disposed on the source 107 , the drain 108 and the PIN photodiode 102 . A metal layer 201 is disposed above the active layer 106 . The metal layer 201 is used for shielding the light incident on the active layer 106 . A resin encapsulation layer 202 is disposed on the passivation layer 109 and the metal layer 201 . A ...

Claims

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Application Information

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IPC IPC(8): H01L31/105
CPCH01L31/105H01L27/14612H01L27/14692H01L27/14696H01L31/02325H01L31/1055H01L27/14663G01T1/20184H01L31/022408H01L31/1884
Inventor 赵磊
Owner BOE TECH GRP CO LTD
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