Reflective layer structure of a light emitting diode
A technology of light-emitting diodes and reflective layers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of unstable mirror structure, easy to be oxidized, and low reflectivity, and achieve simple structure, avoid falling off, and high reflectivity Effect
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[0037] Example 1
[0038] Such as figure 1 As shown, this embodiment provides a reflective layer structure of a light emitting diode, which at least includes:
[0039] Dielectric stack, including alternate stacks of SiO 2 Layer 103 and Ti 3 O 5 Layer 104, wherein the bottom layer of the dielectric stack is SiO 2 Layer 103;
[0040] The middle Ni layer 106 is bonded to the surface of the dielectric laminate;
[0041] The Ag reflective layer 107 is bonded to the surface of the intermediate Ni layer 106;
[0042] The metal stack includes Ni layer 108 and Ag layer 109 alternately stacked, wherein the top layer of the metal stack is Ni layer 108.
[0043] The dielectric stack is combined with the back surface of the thinned sapphire substrate 101 of the light emitting diode, and a light emitting epitaxial structure 102 is prepared on the front surface of the sapphire substrate 101. The dielectric stack includes a plurality of alternately stacked SiO 2 Layer 103 and Ti 3 O 5 Layer 104, and ea...
Example Embodiment
[0048] Example 2
[0049] Such as figure 2 As shown, this embodiment provides a reflective layer structure of a light emitting diode, the basic structure of which is as in embodiment 1, wherein the dielectric stack also includes SiO bonded to the top layer 2 Al on the surface of layer 103 2 O 3 Layer 105, the Al 2 O 3 The thickness of the layer 105 is not greater than 1 micron, and within this thickness range, the reflection effect of the dielectric stack will not be reduced.
[0050] The Al 2 O 3 Layer 105, which is combined with the SiO 2 The layer 103 has a higher bonding strength, and the bonding strength with the middle Ni layer 106 is higher than that of SiO 2 The layer 103 is higher, so the SiO on the top layer 2 Layer 103 first prepare a layer of Al 2 O 3 Compared with Embodiment 1, the layer 105 can make the Ag reflective layer 107 stronger.
Example Embodiment
[0051] Example 3
[0052] Such as image 3 As shown, this embodiment provides a reflective layer structure of a light emitting diode, the basic structure of which is as in embodiment 1, wherein the top layer of the dielectric stack is Ti 3 O 5 Layer 104, and the dielectric stack also includes Ti bonded to the top layer 3 O 5 Al on the surface of layer 104 2 O 3 Layer 105, and the Al 2 O 3 The thickness of layer 105 is not greater than 1 micron.
[0053] The Al 2 O 3 Layer 105 with the Ti 3 O 5 The layer 104 has a higher bonding strength, and the bonding strength with the middle Ni layer 106 is higher than that of SiO 2 The layer 103 is higher, so the Ti 3 O 5 Layer 104 first prepare a layer of Al 2 O 3 Layer 105, used to replace SiO 2 Compared with Embodiment 1, the layer 103 can make the Ag reflective layer 107 stronger.
[0054] As described above, the present invention provides a reflective layer structure of a light emitting diode, which at least includes: a dielectric stack inclu...
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