Epitaxial wafer raman scattering spectra data generation method

A technology for Raman scattering spectroscopy and data generation, which is applied in Raman scattering, material excitation analysis, etc., and can solve difficult and complex problems.

Active Publication Date: 2015-06-10
北京艾瑞豪泰信息技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] In the prior art, see attached figure 1 , the epitaxial wafer 2 is usually arranged on the outer periphery of the graphite disk 1 for a week, in this case, the method for generating the Raman scattering spectrum data of the epitaxial wafer is usually complicated and difficult to achieve continuous and automatic generation

Method used

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  • Epitaxial wafer raman scattering spectra data generation method
  • Epitaxial wafer raman scattering spectra data generation method

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Embodiment

[0022] Take 18 epitaxial wafers 2 arranged in a circle on the graphite disk 1; the rotation speed of the graphite disk 1 is 1000rpm, that is, the time required for each revolution of the graphite disk 1 is 60ms; the spectrometer collects data every 20ms as an example. The spectrum of Raman scattered light and background light on the 1st, 7th, and 13th epitaxial wafers can be obtained by the first rotation of the graphite disk 1, and the background spectrum of the 1st, 7th, and 13th epitaxial wafers can be obtained by the second rotation of the graphite disk 1; Graphite disk 1 rotates for the third time to obtain the spectra of Raman scattered light and background light of the 2nd, 8th, and 14th extended sheets, and graphite disk 1 rotates for the fourth time to obtain the background spectra of the corresponding 2nd, 8th, and 14th extended sheets... …the graphite disc 1 rotates eleventh times to obtain the scattering spectra and background light spectra on the 6th, 12th and 18th...

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Abstract

The invention discloses an epitaxial wafer raman scattering spectra data generation method, which belongs to the technical field of semi conducting material manufacture equipment. Under the rotation condition of graphite discs, by controlling the time interval of the collected data and the initial epitaxial wafer corresponding to each data acquisition period, the collected data can be distributed on all the epitaxial wafers on the periphery of the graphite discs, so that the epitaxial wafer raman scattering spectra data on the periphery of the graphite discs can be obtained, so that the epitaxial wafer raman scattering spectra data on the periphery of the graphite discs can be continuously and automatically distributed by the epitaxial wafer raman scattering spectra data generation method.

Description

technical field [0001] The present invention relates to the technical field of semiconductor material manufacturing equipment, in particular to a method for generating Raman scattering spectrum data of an epitaxial wafer. Background technique [0002] Scattering occurs when light hits a substance. When scattering occurs, the wavelength of a small part of the scattered light will increase or decrease, that is, Raman scattering occurs, and the spectrum corresponding to Raman scattering is called Raman spectrum. Raman spectroscopy belongs to the vibrational spectrum of molecules. Each substance has its own characteristic Raman spectrum, so Raman spectrum can usually be used as a "fingerprint" for identifying substances. Metal organic chemical vapor deposition equipment (MOCVD) is an important equipment for preparing semiconductor materials. At present, the combination of reflectometer and pyrometry can realize the online detection of the temperature, thickness and stress sta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/65
Inventor 严冬李成敏叶龙茂王林梓刘健鹏刘涛
Owner 北京艾瑞豪泰信息技术有限公司
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