Semiconductor temperature difference generation device

A thermoelectric power generation and semiconductor technology, applied in the direction of mufflers, exhaust devices, generators/motors, etc., can solve the problems of temperature difference reduction, hot water temperature drop, semiconductor power generation chip hot end temperature drop, etc., to achieve stable power generation performance Reliable and guarantee the effect of converting technical indicators

Inactive Publication Date: 2015-06-10
NANTONG INST OF TECH
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are also certain defects in the semiconductor thermoelectric power generation device that provides high-temperature liquid as a heat source in the prior art: hot water is usually used as a heat source for high-temperature liquid in the prior art, but even if heat preservation measures are taken, due to the need to consume heat when generating electric energy, Therefore, the temperature of the hot water will drop, resulting in a decrease in the temperature of the hot end of the semiconductor power generation chip, and the temperature difference between the hot end and the cold end will continue to decrease.
At present, there is no use of the temperature of the exhaust pipe of the automobile to generate electricity, so as to achieve the goal of providing stable and sufficient driving voltage to the components to be driven for a long time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor temperature difference generation device
  • Semiconductor temperature difference generation device
  • Semiconductor temperature difference generation device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The invention relates to a semiconductor thermoelectric power generation device, such as figure 1 Shown: the semiconductor thermoelectric power generation device 10 is installed between the three-way catalytic oxidizer of the automobile exhaust pipe 5 and the primary muffler of the automobile exhaust pipe 5; figure 2 , 3 As shown: the semiconductor thermoelectric power generation device 10 includes an external heat sink 1, a semiconductor power generation chip 20 provided with several semiconductor thermoelectric module devices 2 arranged in parallel, and an amplification and voltage stabilization circuit. The voltage output terminals are connected, and the semiconductor power generation chip 20 is covered in the outer heat sink 1 . The semiconductor temperature difference power generation device of the present invention ensures the high-efficiency conversion technical indicators of the power generation device, and the power generation performance is stable and reliab...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor temperature difference generation device. The semiconductor temperature difference generation device is characterized by being installed between a three-way catalytic oxygenizer and a first-stage silencer of an automobile exhaust pipe. The semiconductor temperature difference generation device comprises outer heat radiation fins, a semiconductor generation chip with a plurality of semiconductor thermoelectric module devices arranged in parallel and an amplification and voltage stabilization circuit, the amplification and voltage stabilization circuit is connected with a voltage output end of the semiconductor generation chip, and the semiconductor generation chip is covered with the outer heat radiation fins. The semiconductor temperature difference generation device is installed between the three-way catalytic oxygenizer and the first-stage silencer of the automobile exhaust pipe, guarantees the use condition of the temperature of 200-450 DEG C, and guarantees high-efficient conversion of technical indexes.

Description

technical field [0001] The invention relates to a semiconductor thermoelectric power generation device, which belongs to the field of thermoelectric conversion. Background technique [0002] With the depletion of fossil energy, developed countries such as the United States, Japan, and the European Union have paid more attention to the research of thermoelectric power generation technology in the civilian field, and have made great progress. Domestic research on semiconductor thermoelectric power generation is currently mainly devoted to the study of generator theory and thermoelectric materials with high figure of merit and low cost, aiming to provide theoretical guidance for the optimization of thermoelectric generators and prepare thermoelectric materials with excellent performance. Although my country is the world's largest exporter of semiconductor thermoelectric devices, the research on the comprehensive design and application of semiconductor thermoelectric power gene...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02N11/00F01N5/02
CPCF01N5/025H02N11/004Y02T10/12
Inventor 袁新建张军简玉梅
Owner NANTONG INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products