A method for monitoring the cleanliness of electron microscope vacuum cavity

Abstract

A method for monitoring the cleanliness of a vacuum cavity of an electron microscope comprises the steps that S1, a wafer provided with an oxidation layer of a broken bond is provided; S2, the wafer is transmitted to the vacuum cavity of the electron microscope and arranged on a static sucking disc for movement; S3, the wafer absorbs macromolecular organic compounds possibly existing in the vacuum cavity of the electron microscope; S4, the wafer possibly absorbing the macromolecular organic compounds is coated with a photoresist and judgment whether the defects exist or not is made through defect detection; S5, the cleanliness is further judged through defect judgment. According to the method, the surface of the wafer provided with the oxidation layer of the high-activity broken bond is coated with the photoresist, defect checking is performed according to the abnormal change after the photoresist is combined with the macromolecular organic compounds, and further the cleanliness of the vacuum cavity of the electron microscope is judged. The method is low in cost and simple in operation, is effective to monitor the cleanliness of the vacuum cavity of the electron microscope and is worthy of popularization and usage.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for monitoring the cleanliness of a vacuum chamber of an electron microscope. Background technique [0002] The manufacturing process of integrated circuits is composed of a variety of unidirectional processes. Simply put, the main unidirectional processes usually include three categories: thin film preparation process, image transfer process and doping process. In order to meet the operation requirements of the complex functions of the chip, the critical dimensions of the circuit graphics on the chip are continuously reduced. Engraving, and X-ray lithography, etc. In particular, when the key dimensions of circuit patterns enter the technology node below 20nm, it is difficult for traditional optical inspection equipment to capture small defects of some key patterns due to the limitation of resolution, which seriously hinders the development of variou...

AI Technical Summary

Problems solved by technology

[0008] The present invention is aimed at the prior art, in the process of inspecting wafer defects according to the traditional method, under the extremely low working vacuum of the electron microscope, the trace residue and volatilization of lubricating oil are very likely to be adsorbed on the wafer Surface, and then produce a large number of defects and other problems Provide a method to monitor the cleanliness of the vacuum cavity of the electron microscope

Images