Algan/gan HEMT pressure sensor technology realization method

Abstract

The invention discloses an AlGaN / GaN HEMT pressure sensor process realization method, adopting MOCVD or MBE method to epitaxially grow a single crystal h-BN removal layer on a sapphire substrate; AlGaN / GaN HEMT structure layer; form the gate, source and drain of AlGaN / GaN HEMT on the cap layer; paste the AlGaN / GaN HEMT device face down on the ceramic carrier; apply external force to overcome h‑BN The sapphire substrate is peeled off by van der Waals force; the reverse side of the AlGaN / GaN HEMT device is pasted on the metal copper substrate with holes. In the present invention, the substrate of the device can be transferred by removing the layer of h-BN, avoiding the corrosion process, so that the device can be grown on the sapphire substrate with high quality and hardness of the epitaxial material.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a process realization method of an AlGaN / GaN HEMT pressure sensor. Background technique [0002] Sensor technology is an important symbol of the development level of modern science and technology, and pressure sensors are the most widely used category. With the in-depth research on wide-bandgap semiconductors, it is found that wide-bandgap semiconductor GaN (bandgap width 3.4eV) sensors can detect chemicals, gases, biology, radiation and send signals to the central controller at high temperatures without cooling. AlGaN / GaN HEMT has been proven to have high frequency, high voltage resistance, high temperature resistance and radiation resistance characteristics. It is the most potential device for high power and power electronic devices, and it is also the most potential pressure sensor that can work under harsh conditions. At present, the most advanced growth...

AI Technical Summary

Problems solved by technology

At present, the most advanced growth technologies in AlGaN / GaN HEMTs are MOCVE and MBE. Sapphire, silicon carbide and silicon substrates are used as substrates for epitaxial growth, but they cannot be grown on polycrystalline or amorphous substrates.

At present, silicon carbide has good heat dissipation and is mostly used as the substrate of AlGaN / GaN HEMT power devices, but the price is too high, and the crystal quality is difficult to reach Al 2 o 3 As good as Si, the machining performance is relatively poor; the price of silicon is the cheapest, and the calibration is easy to corrode, but the huge lattice mismatch and thermal mismatch between the silicon substrate and the GaN epitaxial layer make GaN on the Si substrate The material produces a large number of dislocations and cracks, which become obstacles to the growth of GaN materials on Si substrates; AlGaN / GaN HEMTs grown on sapphire substrates have better structural quality and are mostly used, but their hardness is very high, and its hardness is only Inferior to diamond, it is not easy to etch, so better equipment is needed in the etching process, which will increase the production cost

Images