AlGaN/GaN HEMT pressure sensor technology implementation method

Abstract

The invention discloses an AlGaN / GaN HEMT pressure sensor technology implementation method. A single-crystal h-BN removal layer grows on a sapphire substrate in an epitaxial mode through an MOCVD or MBE method; a conventional AlGaN / GaN HEMT structural layer is formed on the h-BN removal layer in an epitaxial mode; the grid electrode, the source electrode and the drain electrode of the AlGaN / GaN HEMT are obtained on a cap layer; the front face of the AlGaN / GaN HEMT device is pasted to a ceramic carrier downwards; external force is applied to overcome the van der waals force of the h-BN removal layer so as to strip off the sapphire substrate; the back face of the AlGaN / GaN HEMT device is pasted to a metal copper substrate with holes downwards. The device substrate can be transferred through the h-BN removal layer, the corrosion process is avoided, and then the device can grow on the high-mass and high-hardness sapphire substrate besides epitaxial materials.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a process realization method of an AlGaN / GaN HEMT pressure sensor. Background technique [0002] Sensor technology is an important symbol of the development level of modern science and technology, and pressure sensors are the most widely used category. With the in-depth research on wide-bandgap semiconductors, it is found that wide-bandgap semiconductor GaN (bandgap width 3.4eV) sensors can detect chemicals, gases, biology, radiation and send signals to the central controller at high temperatures without cooling. AlGaN / GaN HEMT has been proven to have high frequency, high voltage resistance, high temperature resistance and radiation resistance characteristics. It is the most potential device for high power and power electronic devices, and it is also the most potential pressure sensor that can work under harsh conditions. At present, the most advanced growth...

AI Technical Summary

Problems solved by technology

At present, the most advanced growth technologies in AlGaN / GaN HEMTs are MOCVE and MBE. Sapphire, silicon carbide and silicon substrates are used as substrates for epitaxial growth, but they cannot be grown on polycrystalline or amorphous substrates.

At present, silicon carbide has good heat dissipation and is mostly used as the substrate of AlGaN / GaN HEMT power devices, but the price is too high, and the crystal quality is difficult to reach Al 2 o 3 As good as Si, the machining performance is relatively poor; the price of silicon is the cheapest, and the calibration is easy to corrode, but the huge lattice mismatch and thermal mismatch between the silicon substrate and the GaN epitaxial layer make GaN on the Si substrate The material produces a large number of dislocations and cracks, which become obstacles to the growth of GaN materials on Si substrates; AlGaN / GaN HEMTs grown on sapphire substrates have better structural quality and are mostly used, but their hardness is very high, and its hardness is only Inferior to diamond, it is not easy to etch, so better equipment is needed in the etching process, which will increase the production cost

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