How to restore nor type flash data
A data and repeated execution technology, applied in the field of memory, can solve problems such as loss, difficulty in judging data, and data misreading.
Active Publication Date: 2018-04-24
GIGADEVICE SEMICON (BEIJING) INC
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As time goes by, external conditions will continue to act on the memory cells in the memory array, causing the charge stored in the floating gate to be lost through the channel of the memory cell; as the charge in the floating gate of the memory cell decreases, it will cause the threshold voltage of the memory cell When the threshold voltage of the memory cell is reduced to a certain value, it is difficult to judge whether the data stored in the memory cell is 0 or 1, which will cause misreading of the data in the read operation and reduce the reliability of NOR-type FLASH.
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[0032] The present invention will be described in more detail and complete below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content.
[0033] NOR-type FLASH is composed of storage units (cells). Normally, a memory cell includes source (source, S), drain (drain, D), control gate (controlling gate, CG), and floating gate (floating gate, FG), and the control gate can be used to connect Reference voltage VG. If the drain is connected to the reference voltage VD, the voltage VG is applied to the control gate CG and the source S is connected to the ground, the memory cell realizes the channel hot electron injection programming operation. For er...
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The present invention relates to the field of memory technology, in particular to a method for recovering NOR-type FLASH data; wherein the method includes: step 1a, NOR-type FLASH receiving a full-chip data recovery instruction; step 2a, according to the full-chip data recovery instruction, Record the storage unit whose threshold voltage is greater than the first threshold in the storage block; step 3a, record the storage unit whose threshold voltage is less than the second threshold in the storage block, wherein the second threshold is greater than the first threshold; step 4a, the The memory cells whose threshold voltage is less than the second threshold and greater than the first threshold in the memory block perform data recovery; the data recovery is to increase the threshold voltage of the memory cells whose threshold voltage is less than the second threshold and greater than the first threshold. The adoption of the technical solution of the present invention restores the data stored in the storage unit, thereby improving the reliability of the NOR-type FLASH.
Description
technical field [0001] The invention relates to the technical field of memory, in particular to a method for recovering NOR-type FLASH data. Background technique [0002] Reliability is the ability of a product to complete a specified function under specified conditions and within a specified time. For flash memory (FlashMemory), referred to as FLASH, in general, data retention, endurance, and anti-interference ability are important parameters for evaluating the reliability of flash memory. Among them, data retention refers to the data stored in flash memory. Distorted or lost, the ability to still be read effectively. [0003] For FLASH, as time goes by, the threshold voltage of memory cells in FLASH will change. figure 1 Shown is a schematic diagram of threshold voltage changes of memory cells in NOR-type FLASH in the prior art; refer to figure 1 , For memory cells in FLASH, the amount of charge stored in the floating gate determines the threshold voltage of the memory ...
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IPC IPC(8): G11C29/44
Inventor 苏如伟洪杰王林凯胡洪舒清明
Owner GIGADEVICE SEMICON (BEIJING) INC