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Solderless Mounting of Semiconductor Lasers

A laser and semiconductor technology, applied in semiconductor lasers, semiconductor devices, lasers, etc., can solve problems such as laser light source drift and output intensity time error

Inactive Publication Date: 2018-05-15
SPECTRASENSORS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the identification and quantification of trace gas analytes, especially in gases with one or more background compounds whose absorption spectrum may interfere with the absorption characteristics of the target analyte, the drift of the laser source and other changes in the output intensity Variations can introduce serious errors over time

Method used

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  • Solderless Mounting of Semiconductor Lasers
  • Solderless Mounting of Semiconductor Lasers
  • Solderless Mounting of Semiconductor Lasers

Examples

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Embodiment Construction

[0031] Experimental data have shown that small changes in laser emission wavelength, e.g., below 11 picometer (pm), between spectral scans in a laser absorption spectrometer using a scannable or tunable laser source, are obtained with the spectrometer in its pristinely calibrated state The determination of trace gas concentrations can be substantially changed in terms of the measurement of An example of spectral laser spectroscopy using the method of differential spectroscopy is described in commonly-owned US Patent No. 7,704,301. Other experimental data have shown that analyzers based on tunable diode lasers can be unacceptable due to laser output shifts as small as 20 picometers (pm) at constant injection current and constant temperature (controlled, for example, by a thermoelectric cooler). Deviated from its calibration state, the tunable diode laser-based analyzer is designed for the detection and quantification of low analyte concentrations (e.g., approximately parts per ...

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Abstract

The first contact surface (310) of the semiconductor laser chip (302) can be formed to a first target surface roughness and the second contact surface (312) of the load pedestal (304) can be formed to a second target surface roughness. A first bond preparation layer (306) comprising a first metal can optionally be applied to the formed first contact surface, and a second bond preparation layer (308) comprising a second metal can optionally be applied to the formed second contact surface. Both preparation layers can be made of gold and diffusion bonding occurs by heating the device under pressure. The first contact surface can be brought into contact with the second contact surface, and the solderless fixing process can fix the semiconductor laser chip to the load base. Related systems, methods, articles of manufacture, etc. are also described.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Patent Application No. 13 / 659,019, filed October 24, 2012, entitled "Solderless Mounting For Semiconductor Lasers." This application is related to co-pending U.S. Patent No. 7,704,301, entitled "Reactive Gas Detection in Complex Backgrounds," co-pending and Commonly owned U.S. Patent Application Publication No. 2011 / 0299076A1, co-pending and commonly owned U.S. Patent Application Publication No. 2011 entitled "Validation and Correction of Spectrometer Performance Using a Validation Cell" / 0299084A1, entitled "Semiconductor Laser Mounting for Improved Frequency Stability," co-pending and commonly owned U.S. Patent Application Publication No. 2012 / 0236893A1, entitled "Having Self-Testing Calibration and Co-pending and co-owned U.S. Patent Application Publication No. 2011 / 0032516A1, "Optical Absorbance Measurements with Self-Calibration and Extended Dynamic Range", entitled "Kinetic Rec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/022H01S5/042B23K20/02H01S5/024
CPCB23K20/023H01S5/02212H01S5/02476H01L2224/73265B23K20/24B23K2101/42H01S5/0236H01S5/02365H01S5/02355H01S5/02345H01L33/62H01L24/83H01L2224/83201H01L2224/8385H01L2924/12042
Inventor 阿尔弗雷德·菲提施加比·纽鲍尔马蒂亚斯·施里姆佩尔
Owner SPECTRASENSORS INC