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Method for forming bottom anti-reflection layer

An anti-reflection layer and wafer technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problem of large thickness of BARC, and achieve the effect of uniform thickness

Active Publication Date: 2018-10-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for forming a bottom anti-reflection layer, to solve the problem that the BARC at the edge of the wafer is thicker than the BARC at other positions

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  • Method for forming bottom anti-reflection layer
  • Method for forming bottom anti-reflection layer
  • Method for forming bottom anti-reflection layer

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Embodiment Construction

[0021] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0023] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

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Abstract

The present invention provides a bottom anti reflective coating (BARC) forming method. After a BARC is dropped at the center of a wafer, the wafer is rotated for just 3 to 8 seconds and during the short process the BARC is not solidified. Then edge washing liquid is dropped on the edge of the wafer and the wafer is rotated for 13 to 18 seconds so as to reach a uniform thickness of the BARC. In addition, since the BARC is not solidified during the edge washing process, the BARC at the edge of the wafer can be effectively removed so as to form the BARC having a uniform thickness on the surface of the wafer.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for forming a bottom anti-reflection layer (BARC). Background technique [0002] Usually, in the manufacturing process of a semiconductor device, a photoresist pattern is formed on the conductive layer or dielectric layer of the semiconductor device, and then the photoresist is used as a mask, and the part of the conductive layer or dielectric that does not cover the photoresist pattern The layer is not protected, it will be removed in the etching process, or it will be implanted in the ion implantation process, etc. With the improvement of the integration level of semiconductor devices, the line width requirements of semiconductor devices are getting smaller and smaller, and the control of critical dimensions is becoming more and more important. Of course, the requirements for etching processes are also getting higher and higher. In order to me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67
CPCH01L21/02104H01L21/0337
Inventor 邹永祥王鹢奇杨晓松王跃刚易旭东
Owner SEMICON MFG INT (SHANGHAI) CORP