Alignment mark, alignment mark detection method and alignment mark detection device
A technology for alignment marks and detection methods, which is applied in semiconductor/solid-state device testing/measurement, electrical components, electric solid-state devices, etc., can solve the problems of low efficiency of detection methods and achieve the effect of improving efficiency
Active Publication Date: 2015-07-22
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 10 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] The problem solved by the present invention is that the prior art alignment mark detection method is inefficient
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0035] Usually, when using alignment marks for pattern recognition, it is necessary to store the reference pattern of the alignment mark in advance, and then detect the alignment mark on the wafer that enters the machine subsequently to obtain the detection pattern, and match it with the reference pattern , determine the position of the alignment mark, and perform alignment. However, there is an error between the detection patterns of the alignment marks on different wafers, which leads to failure when using the reference pattern to match the detection patterns of different wafers, requiring on-line engineers to calibrate the alignment program, which reduces the efficiency of alignment mark detection.
[0036] The inventors of the present invention found through research that the quality of the alignment mark detection pattern is related to specific semiconductor process steps. For example, depositing thin films of different materials or thin films of different thicknesses on ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides an alignment mark, an alignment mark detection method and an alignment mark detection device. The alignment mark detection method comprises the steps of providing a wafer, wherein the wafer is provided with a first marking pattern and a second marking pattern, the first marking pattern comprises a plurality of strip-shaped patterns which are parallelly distributed along a first direction, the second marking pattern comprises a plurality of strip-shaped patterns which are parallelly distributed along a second direction, and the second direction is vertical with the first direction; detecting the first marking pattern and the second marking pattern, and acquiring a first electric signal and a second electric signal which correspond to the first marking pattern and the second marking pattern respectively; and acquiring position information of the first marking pattern and the second marking pattern according to the first electric signal and the second electric signal. The alignment mark detection method provided by the invention is high in efficiency.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an alignment mark, a detection method for the alignment mark, and a detection device for the alignment mark. Background technique [0002] An integrated circuit is composed of many circuit elements formed on a semiconductor substrate, and multiple layers of dielectric layers and metal interconnections stacked above the substrate. With the shrinking of the line width of integrated circuit design and the continuous improvement of integration, wafer alignment accuracy (alignment accuracy) is very important when exposing the wafer. [0003] In the existing semiconductor manufacturing process, before semiconductor devices are fabricated on the wafer, the wafer needs to be layout designed, and the wafer is divided into several unit areas (Die) and cutting grooves (Scribe line) between the unit areas. . The unit area is used to subsequently form a semiconductor device, and the ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544H01L21/66
Inventor 岳力挽伍强
Owner SEMICON MFG INT (SHANGHAI) CORP