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Semiconductor drive device and power conversion device using the semiconductor drive device

A driving device and semiconductor technology, applied in the direction of output power conversion device, circuit device, emergency protection circuit device, etc., can solve the problems of large detection delay, inability to protect, and inability to effectively use the emitter current to detect high speed, etc. The effect of low detection probability

Active Publication Date: 2017-07-04
HITACHI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0046] For example, in , when the emitter current detection method and the collector voltage detection method are used together, the detection delay of the collector voltage detection is larger than that of the emitter current detection. In the "AND" operation method, Cannot take advantage of the high speed of emitter current detection
As a result, there is a possibility that Type II short circuit and Type III short circuit that require high speed cannot be protected.

Method used

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  • Semiconductor drive device and power conversion device using the semiconductor drive device
  • Semiconductor drive device and power conversion device using the semiconductor drive device
  • Semiconductor drive device and power conversion device using the semiconductor drive device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0113] [Structure of semiconductor drive device]

[0114] image 3 It is a diagram showing the basic configuration of the semiconductor drive device according to the first embodiment of the present invention. In addition, in Embodiment 1, an IGBT was taken as an example of a semiconductor for description, but the present invention is not limited thereto, and can be applied to other common semiconductor drive devices.

[0115] Such as image 3 As shown, the semiconductor drive device according to Embodiment 1 is composed of a command unit 1, a gate drive unit 2, a gate voltage detection unit 3, a collector current detection unit 5, a first integration circuit 100, a second integration circuit 110, and an output The control circuit 300 is configured.

[0116] As a configuration example of the collector current detection unit 5, it generally corresponds to a detection resistor, a detection element, or other current detectors.

[0117] The integrating circuit 100 and the integ...

specific example 1

[0141] Figure 4 yes means image 3 A diagram showing the device configuration of Specific Example 1 of Example 1.

[0142] The gate voltage detection unit 3 detects a gate voltage higher than the power supply voltage using a comparator or the like, and generates a constant-period pulse when abnormality is detected.

[0143] On the other hand, the collector current detection unit 5 obtains the collector current by integrating the induced voltage Le·dIc / dt generated in the parasitic inductance Le of the module, and judges an overcurrent higher than a predetermined value by a comparator circuit. state.

[0144] The integrating circuit 100 and the integrating circuit 110 are constituted by CR filter circuits. The output control circuit 300 is constituted by an AND circuit, and when an abnormality is detected by the gate voltage detection unit 3 , the output of the integration circuit 100 , that is, the detection signal SCS with a short time constant is enabled.

[0145] The g...

specific example 2

[0147] Figure 5 yes means image 3 A diagram showing the device configuration of Specific Example 2 of Example 1.

[0148] and Figure 4 The specific example 1 shown is different in that an operational amplifier is used as the integrating circuit 100 and integrating circuit 110 to obtain the charge amount ∫dt·Ic flowing to the element at the time of short circuit.

[0149] Thus, compared with the time-integration method performed by the CR filter circuit as in Specific Example 1, since it is possible to obtain how much charge flows and set a judgment level corresponding to the accumulated stress, it is possible to realize Reliable design of component loads.

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Abstract

The present invention provides a semiconductor drive device and a power conversion device having a highly reliable short-circuit protection function that suppresses false detection. The semiconductor driving device is constituted by the following elements: the main detection unit, which detects the current or voltage of the main terminal of the semiconductor element; the auxiliary detection unit, which detects the current or voltage of the control terminal of the semiconductor element, or the one which the main detection unit does not detect. Either one of the current or voltage of the main terminal; an integration unit that receives the output of the main detection unit to perform two time integrations with different time constants; and an output control unit that controls the output from the integration unit based on the output of the auxiliary detection unit. The semiconductor drive device controls the voltage or current of the control terminal by the output of the shorter time constant from the output of the integrating unit or the output of the output control unit, which has a longer time constant.

Description

technical field [0001] The present invention relates to a semiconductor drive device equipped with a protection function, and a power conversion device using the semiconductor drive device. Background technique [0002] A power conversion device including an inverter realizes power conversion by switching operations of semiconductor switching elements. As typical examples of such semiconductor switching elements, voltage-driven semiconductor elements such as MOS-FETs and IGBTs are widely used. In particular, IGBTs capable of high-speed switching and high power control are used in a wide range of fields, from small-capacity inverters for home appliances to large-capacity inverters for railways. [0003] In order to control such a semiconductor switching element, a semiconductor driver is required. Generally, a driving device for a voltage-driven semiconductor has a function of controlling the conduction state of the semiconductor switching element by applying a voltage to t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08H02M1/32H02H7/20H02H9/02
CPCH03K17/0828H03K2217/0027H02M1/32H02M1/38H02M1/0009
Inventor 恩田航平坂野顺一河野恭彦石川胜美
Owner HITACHI LTD
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