Negative electrode for electrical device and electrical device provided with same
A technology for electrical equipment and negative electrodes, applied in the field of negative electrodes for electrical equipment, can solve problems such as large expansion and contraction, difficulty in showing high capacity and high cycle durability, and reduced cycle life of electrodes
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[0226] The present invention is further described in detail using the following examples. However, the protection scope of the present invention is not limited to the following examples.
[0227] First, as a reference example, performance evaluation was performed on the Si alloy represented by the chemical formula (1) constituting the negative electrode for electrical equipment of the present invention.
reference example A
[0228] (Reference Example A): For Si x Ti y Ge z A a performance evaluation of
[0229] [1] Production of negative electrode
[0230] As the sputtering device, a three-element DC magnetron sputtering device with an independent control method (manufactured by Daiwa Ki Kogyo Co., Ltd., combined sputtering coating device, gun-sample distance: about 100mm) was used, and a nickel foil with a thickness of 20 μm was used. A total of 31 kinds of negative electrode samples (Reference Examples 1 to 18 and Reference Comparative Examples 1 to 13) were obtained by forming thin films of negative electrode active material alloys with various compositions on the formed substrate (current collector) under the following conditions. .
[0231] (1) Target (manufactured by High Purity Chemical Laboratory Co., Ltd., purity: 4N)
[0232] Si: 50.8mm diameter, 3mm thickness (with a 2mm thick oxygen-free copper backing plate)
[0233] Ti: 50.8mm diameter, 5mm thickness
[0234] Ge: 50.8 mm diam...
reference example B
[0265] (Reference Example B): For Si x Ti y sn z A a performance evaluation of
[0266] [1] Production of negative electrode
[0267] In (1) of Reference Example 1, "Ge: 50.8 mm diameter, 3 mm thickness (with an oxygen-free copper backing plate with a thickness of 2 mm)" was changed to "Sn: 50.8 mm diameter, 5 mm thickness", and ( In 2), except that "Ge (0-120W)" of the DC power supply was changed to "Sn (0-40W)", a total of 40 kinds of negative electrode samples were produced by the same method as Reference Example 1 (Reference Examples 19-44 and Reference Comparative Examples 14-27).
[0268] Regarding (2) above, if several examples of sample production are shown, in Reference Example 35, DC power supply 1 (Si target): 185W, DC power supply 2 (Sn target): 30W, DC power supply 3 (Ti target): 150W. In addition, in Comparative Reference Example 15, DC power supply 1 (Si target): 185W, DC power supply 2 (Sn target): 22W, and DC power supply 3 (Ti target): 0W. Furthermore...
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