Piezoelectric composition and piezoelectric element
A technology of piezoelectric elements and compositions, applied in electrical elements, piezoelectric/electrostrictive/magnetostrictive devices, material selection for piezoelectric devices or electrostrictive devices, etc., capable of solving crystal anisotropy Large and other problems, to achieve the effect of excellent piezoelectric characteristics, excellent environmental performance, and low pollution
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Embodiment 1～ Embodiment 8
[0108] figure 2 A cross-sectional view showing the structure of the piezoelectric thin film element according to this embodiment. As the substrate, a Si substrate 1 with a thermally oxidized film was used. The Si substrate 1 is a circular substrate with a diameter of 3 inches, and is composed of a Si substrate 1 with a thickness of 0.5 mm in the (100) plane orientation and a thermal oxide film 2 with a thickness of 500 nm formed thereon. First, the Ti adhesion layer 3 and the lower electrode layer 4 are formed on the substrate by RF magnetron sputtering (magnetronsputtering) method. The lower electrode layer 4 is composed of a Ti adhesive layer 3 with a film thickness of 20 nm formed on the thermal oxide film 2 and a Pt lower electrode layer 4 with a film thickness of 200 nm and preferentially oriented to the (111) plane formed thereon. The thickness of the Ti adhesive layer 3 can be appropriately adjusted within the range in which it functions as an adhesive layer.
[010...
Embodiment 9～20
[0116] For Examples 9 to 20, the PLD target was changed to a target having an elemental ratio of Bi to Cr of 1:1, a target having an elemental ratio of Bi to Fe of 1:1, and a target having an elemental ratio of Bi to Mn of 1: 1, and a target in which the element ratio of Bi, Mn, and Co was 1:0.5:0.5, etc., the piezoelectric thin film element was fabricated by the same method as in Examples 1-6.
Embodiment 21～24
[0128] (Examples 21 to 24, and Comparative Examples 11 to 12)
[0129] Furthermore, when examining the range of A / B ratio (the value of m), it examined with the composition of Table 2.
[0130] In Examples 21 to 24 and Comparative Examples 11 to 12, (Bi 0.5 Na 0.5 ) m TiO 3 target, Bi(Mg 0.5 Ti 0.5 ) m o 3 target. Then, a target having an element ratio of Bi and Co of m:1 was produced, and a piezoelectric thin film element was produced in the same manner as in the examples.
[0131]
[0132] As shown in Table 2, when m is less than 0.75, since out-of-phase occurs, the maximum value Pm of spontaneous polarization also becomes small. On the other hand, when m is larger than 1.00, the maximum value Pm of spontaneous polarization also becomes small due to abnormal grain growth or the like.
[0133] As a film-forming method of the piezoelectric thin film, the PLD method has been described, but any method such as a sputtering method, a solution method, and a CVD (Chemic...
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