Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Etching equipment and throttle valve thereof

A technology of reaction equipment and throttle valve, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as cavity pressure instability, bearing damage, and poor operation of transmission mechanisms, so as to improve reliability and avoid Effects of Particulate Pollution

Active Publication Date: 2015-08-12
WINBOND ELECTRONICS CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The throttling opening design of the pendulum valve will damage the bearing due to the leverage effect of the airflow pressure, resulting in poor operation of the transmission mechanism and directly affecting the instability of the cavity pressure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching equipment and throttle valve thereof
  • Etching equipment and throttle valve thereof
  • Etching equipment and throttle valve thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] refer to figure 1 , which shows the etching reaction equipment 1 of the embodiment of the present invention, which is used to etch a wafer 9, including a cavity reaction chamber 11, a crystal seat (lower electrode) 12, a reaction gas inlet 13, and an upper electrode 14 , air pump 15, radio frequency generator 16, pressure sensor 17 and throttle valve 100. The wafer 9 is placed on the crystal base (bottom electrode) 12 via the transfer arm. The reaction gas inlet 13 is arranged on the top of the reaction chamber 11 of the chamber, and the etching gas is injected into the chamber from above through the upper electrode 14 .

[0029] The pressure sensor 17 senses the pressure of the reaction gas in the cavity reaction chamber 11, and provides a pressure sensing value, and the etching reaction equipment 1 controls the air pump 15 and the section according to the pressure sensing value. The action of the flow valve 100 is used to adjust the pressure of the reaction gas in t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is etching equipment and a throttle valve thereof. The throttle valve comprises a first substrate, a second substrate and a plurality of blades. The first substrate comprises a plurality of pin joint structures, wherein a first opening is formed on the first substrate. The second substrate comprises a plurality of turning structures, wherein a second opening is formed on the second substrate. Each blade comprises a pin joint part and a connection part, wherein the pin joint part is in connection with one of the pin joint structures, and the connection part is in connection with one of the turning structures. Through relative rotation between the first substrate and the second substrate, the blades rotate between a first position and a second position; when the blades are at the first position, the blades commonly define a blade opening, and the blade opening corresponds with the first opening and the second opening; when the blades are at the second position, the blade opening is closed. The throttle valve does not employ a belt, thereby avoiding particulate pollution; in addition, the throttle valve can not generate leverage effect caused by airflow pressure, so that the reliability of the throttle valve can be effectively improved.

Description

technical field [0001] The present invention relates to a throttle valve, in particular to an etching reaction equipment (Etching equipment) and a throttle valve applied to etching reaction equipment. Background technique [0002] The dry etching machine in the semiconductor process is mainly used in the definition (pattern transfer) of components and wire layers. The etching principle is to use plasma to ionize the etching gas, and then chemically react with the material or add physical properties. The impact of isotropic or anisotropic (anisotropic) features. The etch performance index evaluation items include (1) etch rate, (2) uniformity, (3) selectivity, (4) profile, and the stability of chamber pressure is An important factor affecting the etching performance. [0003] The existing way of servoing and maintaining the pressure of dry etching machines is to inject etching gas into the cavity, and to servo and maintain the pressure required by the process through the op...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306B05C11/00
Inventor 何信春
Owner WINBOND ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com