Temperature-controllable heating plate with boss surface structure arranged in polygon shape

A technology of polygonal structure and surface structure, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as the inability to quickly and accurately control the wafer temperature, achieve the effect of enhancing heat conduction efficiency and improving yield

Inactive Publication Date: 2015-08-12
PIOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the above problems, and mainly solve the problem that the existing heating plate and electrostatic chuck cannot quickly and accurately control the wafer temperature

Method used

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  • Temperature-controllable heating plate with boss surface structure arranged in polygon shape

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Embodiment

[0013] Such as figure 1 As shown, a temperature-controllable heating plate with polygonal distribution of boss surface structure includes a heating plate 4 with a central air inlet 1 . The outer circumference of the heating plate 4 is provided with a gas recovery hole 3 and N bosses 2 are arranged on the surface, and the N bosses 2 form a polygonal structure.

[0014] The polygonal structure is a regular boss structure such as pentagon, hexagon or octagon;

[0015] There is a gap between the boss 2 and the boss 2;

[0016] The size of the boss 2 on the surface of the heating plate 4 gradually decreases from the middle to the edge.

[0017] Working principle: The heat conduction medium enters the surface of the heating plate from the central air inlet 1 of the heating plate 4, and a certain space in the center is used to release the pressure when the gas enters. The surface of the heating plate 4 has bosses 2 regularly distributed in a polygonal shape. The gap between the bo...

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Abstract

A temperature-controllable heating plate with a boss surface structure arranged in a polygon shape comprises a heating plate provided with a central gas inlet hole. The outer circle of the heating plate is provided with gas recovery holes, and N bosses are arranged on the surface. The N bosses form the polygon structure. The polygon structure is a regular boss structure having five edges, six edges, eight edges or the like. According to the work principle, a heat-conducting medium enters the surface of the heating plate through the central gas inlet hole of the heating plate, flowing space of the heat-conducting medium is formed in gaps among the bosses, gas finally enters the gas recovery holes in the outer circle of the hearing plate and returns to a heat-conducting medium cooling device from the inner part of the heating plate, and cooling is realized in the heat-conducting medium cooling device. The cooled gas flows in from the center of the heating plate once again so as to realize cycling flowing of the heat-conducting medium. According to the invention, the gas distribution structure is reasonably designed, and the heat-conducting medium is enabled to be directly, rapidly and uniformly distributed between the heating plate and a wafer, so that rapid and accurate control over the temperature of the wafer is realized.

Description

technical field [0001] The invention relates to a disk surface structure of a temperature-controllable heating disk applied to semiconductor deposition equipment. The gas distribution form on the surface of the polygonal boss disk is used to achieve precise control of the wafer temperature. The invention belongs to the technical field of semiconductor thin film deposition application and manufacture. Background technique [0002] Semiconductor equipment often needs to preheat the wafer and chamber space or maintain the temperature required for the deposition reaction during the deposition reaction. Most semiconductor deposition equipment uses heating plates or electrostatic chucks to achieve the purpose of preheating the wafer. However, because the deposition reaction is mostly carried out under vacuum conditions, the vacuum environment has poor thermal conductivity due to the lack of heat-conducting media. It is often not possible to preheat the wafer to the required temp...

Claims

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Application Information

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IPC IPC(8): H01L21/67
Inventor 陈英男姜崴郑旭东关帅
Owner PIOTECH CO LTD
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