Preprocessing system and method for low dose rate radiation damage enhancement effect test of bipolar devices

A technology for bipolar devices, radiation damage, used in the field of electronics

Active Publication Date: 2018-01-02
FIFTH ELECTRONICS RES INST OF MINIST OF IND & INFORMATION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is currently a lack of dedicated tools for pretreatment by implanting an appropriate concentration of hydrogen molecules at the oxide layer or silicon interface of bipolar devices

Method used

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  • Preprocessing system and method for low dose rate radiation damage enhancement effect test of bipolar devices
  • Preprocessing system and method for low dose rate radiation damage enhancement effect test of bipolar devices

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Embodiment Construction

[0025] Embodiments of the present invention are described in detail below:

[0026] Such as Figure 1-2 As shown, it is a pretreatment system for the low dose rate radiation damage enhancement effect test of bipolar devices, including a vacuum pump 2, a pressure measuring device 4, a temperature control device 1 and a hydrogen supply device 6 connected to each other through pipelines in sequence, and the vacuum pump 2 and the pressure measuring device 4 is provided with a first regulating valve 3, between the temperature control device 1 and the hydrogen supply device 6 is provided with a second regulating valve 5, the temperature control device 1 includes a sealing cover 12 and a bipolar device can be placed The main body 11, the sealing cover 12 is adapted to the opening of the main body 11, the sealing cover 12 is hingedly connected with the main body 11, and the main body 11 communicates with the pressure measuring device 4 and the hydrogen supply device 6 respectively. A...

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Abstract

The invention discloses a preprocessing system and method for the low dose rate radiation damage enhancement effect test of bipolar devices. The preprocessing system for the low dose rate radiation damage enhancement effect test of bipolar devices includes a vacuum pump, a pressure measuring device, and a vacuum pump connected in sequence. device, temperature control device and hydrogen supply device, a first regulating valve is provided between the vacuum pump and the pressure measuring device, a second regulating valve is provided between the temperature control device and the hydrogen supply device, the temperature control device includes a sealing cover and can accommodate double The main body of the polar device, the sealing cover is adapted to the opening of the main body, and the main body communicates with the pressure measuring device and the hydrogen supply device respectively. This system can effectively incorporate hydrogen molecules at the oxide layer or silicon interface of bipolar devices. The pretreatment method of the low-dose rate radiation damage enhancement effect test of bipolar devices can make the concentration of hydrogen molecules doped in the oxide layer or silicon interface of bipolar devices reach a predetermined concentration that meets the test requirements.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a pretreatment system and method for a low dose rate radiation damage enhancement effect test of a bipolar device. Background technique [0002] Bipolar devices are widely used in analog integrated circuits, mixed signal integrated circuits and ultra-high-speed radio frequency integrated circuits. However, when these products are used in the space environment or the environment with radiation on the ground, the device will face long-term, high-energy, and large-dose particle radiation, the performance of the device and its circuit will be degraded, and the system life will be significantly reduced. The degradation of electrical properties of bipolar transistors and linear circuits under low dose rate radiation will be much greater than that under high dose rate radiation, which is called enhanced low dose rate radiation damage sensitivity (ELDRS). The results show that the d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
Inventor 杨少华王晓晗刘远恩云飞黄云雷志锋陈辉
Owner FIFTH ELECTRONICS RES INST OF MINIST OF IND & INFORMATION TECH
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