A seed crystal substrate in-situ bonding method for homoepitaxial growth of single crystal diamond

A technology for growing single crystal and homoepitaxial growth, which is applied in the directions of single crystal growth, crystal growth, single crystal growth, etc. It can solve the problem of heat conduction between the seed crystal and the metal molybdenum substrate, the deviation of the seed crystal from the optimal position, and the surface quality of the seed crystal. to avoid connection failure, simplify operation, save time and cost

Active Publication Date: 2017-03-01
苏州碳真芯材科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The present invention aims to solve the problem that the seed crystal is easily blown by the air flow and deviates from the optimal position in the existing MWCVD growth system, and the heat conduction between the seed crystal and the metal molybdenum substrate is difficult, and the use of vacuum brazing causes the surface quality of the seed crystal to decline and is difficult to observe. problem, and provide a seed crystal substrate in-situ bonding method for homoepitaxial growth of single crystal diamond

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  • A seed crystal substrate in-situ bonding method for homoepitaxial growth of single crystal diamond
  • A seed crystal substrate in-situ bonding method for homoepitaxial growth of single crystal diamond
  • A seed crystal substrate in-situ bonding method for homoepitaxial growth of single crystal diamond

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specific Embodiment approach 1

[0033] Specific implementation mode one: combine figure 1 with figure 2 Specifically explaining this embodiment, a method for in-situ connection of a seed crystal substrate for homoepitaxial growth of single crystal diamond described in this embodiment is specifically carried out according to the following steps:

[0034] 1. Cleaning: cleaning the diamond seed crystal and the metal molybdenum substrate wafer to obtain the cleaned diamond seed crystal and the cleaned metal molybdenum substrate wafer;

[0035] 2. Select gold foil: select a flat gold foil with a thickness of 20 μm to 100 μm, and cut the flat gold foil into a square piece that is 0.5 mm to 1.5 mm larger than the diamond seed crystal in length and width to obtain a welding medium;

[0036] The purity of the flat gold foil is 18K-24K;

[0037] 3. Place the sample:

[0038] Place four metal molybdenum wires in a "well" shape to obtain a metal molybdenum wire base, place the metal molybdenum wire base on the micro...

specific Embodiment approach 2

[0055] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, the diamond seed crystal and the metal molybdenum substrate wafer are cleaned, specifically according to the following steps: Under certain conditions, the diamond seed crystal and the metal molybdenum substrate wafer were washed in acetone for 15 min to 30 min, in deionized water for 15 min to 30 min, and in absolute ethanol for 15 min to 30 min to obtain the cleaned diamond seed crystal and the cleaned After the metal molybdenum substrate wafer. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0056] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the purity of the flat gold foil described in step 2 is 24K. Others are the same as in the first or second embodiment.

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Abstract

A seed crystal-substrate in-situ connection method for a homoepitaxial-growth monocrystalline diamond, the invention relates to the seed crystal-substrate in-situ connection method for the homoepitaxial-growth monocrystalline diamond. The seed crystal-substrate in-situ connection method is used for solving the problems of the existing MWCVD growth system that seed crystals are prone to being deviated from the best position due to airflow blowing, the heat conduction between the seed crystals and a metal molybdenum substrate is difficult, and due to vacuum brazing, the surface quality of the seed crystals is lowered and observation is difficult. The method comprises the steps: (1) cleaning; (2) selecting gold foil; (3) placing samples; (4) carrying out in-situ connection; (5) carrying out diamond growth, thereby completing the seed crystal-substrate in-situ connection method for the homoepitaxial-growth monocrystalline diamond. The invention is applied to the seed crystal-substrate in-situ connection method for the homoepitaxial-growth monocrystalline diamond.

Description

technical field [0001] The invention relates to a seed crystal substrate in-situ connection method for homoepitaxial growth of single crystal diamond. Background technique [0002] In recent years, large-size single crystal diamond and quasi-single crystal diamond have been used in precision machining, high High-tech fields such as frequency communication, aerospace and cutting-edge technology have gradually become the basic, key and even the only material solutions. The traditional synthetic single crystal diamond adopts high temperature and high pressure (HPHT) method. The diamond prepared by this method contains more impurities, higher defect density, relatively poor quality, and smaller size, which is quite different from the requirements of related applications. Far, resulting in a narrow application range of HPHT diamond, in the downstream of the industry, low profits, and weak competitiveness. [0003] Compared with the HPHT method, the microwave plasma-assisted che...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/20C30B29/04
Inventor 朱嘉琦舒国阳代兵韩杰才陈亚男杨磊王强王杨刘康赵继文孙明琪
Owner 苏州碳真芯材科技有限公司
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