37results about How to "Stable growth process" patented technology

The invention discloses a tunable laser crystal blended chrome-molybdenum acid aluminium potassium crystal and preparing method, which is characterized by the following: adopting fused salt top seed crystal method; adopting 60-80at%K2Mo3O10 as fluxing agent; setting detemperature rate at 1-5 deg. c / day; setting revolution rate at 5-30 rotation per min; growing out Cr3+:KAl(MoO4)2 crystal with high quality and bigger size; belonging to trigonal crystal system; possessing P3ml(D3d3) space group structure with refractive index at 1.74. This crystal can be used as tunable laser crystal with tunable range at 700-950 nm, which can be used to spectrography, biological medicine and military domain.

The invention discloses a dysprosium-doped strontium calcium molybdate green laser crystal. The molecular formula for the crystal is Dy<3+>:Sr2CaMoO6, which belongs to an orthorhombic system and a Pmm2 space group, crystal cell parameters are alpha=beta=gamma=90 DEG, a=8.1513 angstrom, b=5.7416 angstrom, c=5.8385 angstrom and Z=2. The invention also provides a method of preparing the above dysprosium-doped strontium calcium molybdate green laser crystal. A molten salt top-seeded solution growth method is adopted; K2Mo2O7-MoO3 serves as a fluxing agent; the growth parameters are: a cooling rate of 0.5 to 3 DEG C per day, growth temperature of 750 to 790 DEG C, and a rotation speed of 5 to 30 revolutions per minute; the Dy<3+>:Sr2CaMoO6 crystal grows; and the doping concentration of Dy<3+> is 1at.% to 15at.%. The crystal of the invention can be used as a laser working material in a solid-state laser, a flash or a laser diode is used as a pumping source, and green laser is excited and generated and outputted.

The invention relates to a rare earth ion Ln<3+>-doped gadolinium strontium aluminate laser crystal. The laser crystal is Ln<3+>:Gd2SrAl2O7, wherein Ln<3+> is equal to Nd<3+>, Yb<3+>, Tm<3+>, Dy<3+>, Er<3+> and Ho<3+>, and the doping concentration is 0.1at%-50at%; and the single crystal belongs to a tetragonal system, the space group is I4 / mmm, the cell parameters are as follows: a and b are equal to 3.7052-3.73149 angstroms, c is equal to 19.781-19.9857 angstroms, alpha, beta and gamma are equal to 90 degrees, V is equal to 271.56-278.28 cubic angstroms, and z is equal to 2. According to the single crystal, the lattice site of a trivalent gadolinium ion in a lattice is replaced with a trivalent rare earth ion. The compound is a congruent melting compound with a melting point of 1780 DEG C, and the single crystal with high optical quality and large size can grow by virtue of a pulling method and can be taken as the laser crystal.

The invention relates to a vacuum brazing method for a seed crystal substrate for homoepitaxial growing of monocrystal diamond. The method aims to solve the problems that in an existing MWCVD growth system, seed crystal is prone to being blown by airflow to deviate from the optimum position, and heat is difficult to conduct between the seed crystal and a metallic molybdenum substrate; a traditional welding medium is too low in melting point and poor in compatibility with the diamond or reacts with the diamond seriously to damage the seed crystal, and the high-quality growth requirement for the diamond cannot be met. The method comprises the steps of 1 cleaning, 2 welding medium selection, 3 sample placing and 4 vacuum brazing. In this way, the vacuum brazing for the seed crystal substrate for homoepitaxial growing of the monocrystal diamond is achieved.