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A seed crystal substrate vacuum brazing method for homoepitaxial growth of single crystal diamond

A single crystal growth, homoepitaxy technology, used in welding equipment, metal processing equipment, manufacturing tools, etc., can solve the problems of damaged seed crystals, poor diamond compatibility, and seed crystals deviating from the best position, to ensure quality, The effect of improving compatibility

Active Publication Date: 2017-01-25
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The present invention aims to solve the problem that the seed crystal is easily blown by the airflow and deviates from the optimal position in the existing MWCVD growth system, and the heat conduction between the seed crystal and the metal molybdenum substrate is difficult, the melting point of the traditional welding medium is too low, and the compatibility with diamond is poor or reactive. Severely damage the seed crystal, unable to meet the problem of high-quality diamond growth, and provide a seed crystal substrate vacuum brazing method for homoepitaxial growth of single crystal diamond

Method used

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  • A seed crystal substrate vacuum brazing method for homoepitaxial growth of single crystal diamond
  • A seed crystal substrate vacuum brazing method for homoepitaxial growth of single crystal diamond
  • A seed crystal substrate vacuum brazing method for homoepitaxial growth of single crystal diamond

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specific Embodiment approach 1

[0031] Specific implementation mode one: combine Figure 1-2 This embodiment is described in detail. The vacuum brazing method for a seed crystal substrate of homoepitaxially grown single crystal diamond described in this embodiment is specifically carried out according to the following steps:

[0032] 1. Cleaning: cleaning the diamond seed crystal and the metal molybdenum substrate wafer to obtain the cleaned diamond seed crystal and the cleaned metal molybdenum substrate wafer;

[0033] 2. Selection of welding medium: Punch the alloy with a punching machine to form a flat gold flake with a thickness of 20 μm to 100 μm, and cut the flat gold flake into a square piece that is 0.5 mm to 1.5 mm larger in length and width than the cleaned diamond seed crystal, to obtain Welding medium;

[0034] The mass percentage of Fe element in the alloy is 3%-5%, the mass percentage of Ti element is 10%-20%, the mass percentage of Cr element is 10%-25%, and the balance is Ni element;

[003...

specific Embodiment approach 2

[0049] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, the diamond seed crystal is cleaned, specifically according to the following steps: under the condition of ultrasonic power of 100W-400W, the diamond seed crystal Washing in acetone for 15 min to 30 min, washing in deionized water for 15 min to 30 min, and washing in absolute ethanol for 15 min to 30 min, to obtain diamond seed crystals after washing. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0050] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in step 1, the metal molybdenum substrate wafer is cleaned, specifically according to the following steps: Under certain conditions, the metal molybdenum substrate wafer is washed in acetone for 15 minutes to 30 minutes, deionized water for 15 minutes to 30 minutes, and absolute ethanol for 15 minutes to 30 minutes to obtain the metal molybdenum substrate disk after cleaning. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a vacuum brazing method for a seed crystal substrate for homoepitaxial growing of monocrystal diamond. The method aims to solve the problems that in an existing MWCVD growth system, seed crystal is prone to being blown by airflow to deviate from the optimum position, and heat is difficult to conduct between the seed crystal and a metallic molybdenum substrate; a traditional welding medium is too low in melting point and poor in compatibility with the diamond or reacts with the diamond seriously to damage the seed crystal, and the high-quality growth requirement for the diamond cannot be met. The method comprises the steps of 1 cleaning, 2 welding medium selection, 3 sample placing and 4 vacuum brazing. In this way, the vacuum brazing for the seed crystal substrate for homoepitaxial growing of the monocrystal diamond is achieved.

Description

technical field [0001] The invention relates to a seed crystal substrate vacuum brazing method for homoepitaxially growing single crystal diamond. Background technique [0002] In recent years, large-size single crystal diamond and quasi-single crystal diamond have been used in precision machining, high High-tech fields such as frequency communication, aerospace and cutting-edge technology have gradually become the basic, key and even the only material solutions. The traditional synthetic single crystal diamond adopts high temperature and high pressure (HPHT) method. The diamond prepared by this method contains more impurities, higher defect density, relatively poor quality, and smaller size, which is quite different from the requirements of related applications. Far, resulting in a narrow application range of HPHT diamond, in the downstream of the industry, low profits, and weak competitiveness. [0003] Compared with the HPHT method, the microwave plasma-assisted chemica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K1/008B23K1/20
CPCB23K1/0008B23K1/008B23K1/206
Inventor 朱嘉琦舒国阳代兵杨磊王强王杨陈亚男赵继文刘康孙明琪韩杰才
Owner HARBIN INST OF TECH
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