Cr<3+>:KMgSc(WO4)3 doped tunable laser crystal and method for preparing same
A technology of laser crystals and potassium chromate tungstate, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of small emission cross section, difficult growth, and inability to promote industrial applications, etc., to achieve tunable laser band wide, stable growth process, and excellent optical properties
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0019] Example 1: with K 2 W 2 o 7 The doping concentration for flux growth is 1.0at.%Cr 3+ Cr 3+ : KMgSc(WO 4 ) 3 laser crystals.
[0020] The growth material was KMgSc (WO 4 ) 3 : K 2 W 2 o 7 =1:4 (molar ratio), doped with 1.0at% Cr 3+ ion. Using the flux method, in a φ60×50mm platinum crucible, the growth temperature is between 820 and 750°C, with a cooling rate of 1°C / day and a crystal speed of 5 revolutions / min, a crystal with a size of 25×25× 10mm 3 high quality Cr 3+ :KMgSc(WO 4 ) 3 crystals. The analysis by ICP (plasma emission spectrometry) shows that Cr in the crystal 3+ The ion content is 0.5 at%.
Embodiment 2
[0021] Example 2: with K 2 W 2 o 7 The doping concentration for flux growth is 2.0at.%Cr 3+ Cr 3+ : KMgSc(WO 4 ) 3 laser crystals.
[0022] The growth material was KMgSc (WO 4 ) 3 :K 2 W 2 o 7 =2:3 (molar ratio), doped with 2.0at% Cr 3+ ion. Using the flux method, in a φ60×50mm platinum crucible, the growth temperature is between 850 and 770°C, with a cooling rate of 3°C / day and a crystal rotation speed of 30 rpm, a crystal with a size of 15×15× 10mm 3 high quality Cr 3+ :KMgSc(WO4 ) 3 crystals. The analysis by ICP (plasma emission spectrometry) shows that Cr in the crystal 3+ The ion content is 1.0 at%.
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com