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Nonlinear magnetic resistance-enhanced magnetic sensor device and preparation method thereof

A magnetic sensor, non-linear technology, applied in the manufacture/processing of magnetic field controlled resistors, electromagnetic devices, etc., can solve the problems of low room temperature magnetoresistance, large magnetic field, hindering applications, etc., and achieve a wide range of practical prospects. The effect of moderate raw material price and excellent magnetic resistance performance

Inactive Publication Date: 2015-09-09
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this working magnetic field is still too large for many magnetic sensor fields, such as read heads, electronic compasses, etc., hindering further applications.
In addition, scientists have also proposed semiconductor / magnetic material composite magnetoelectronic devices, which are mainly based on the use of the leakage magnetic field of magnetic materials, the required magnetic field is still large, and the room temperature magnetoresistance value is not high

Method used

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  • Nonlinear magnetic resistance-enhanced magnetic sensor device and preparation method thereof
  • Nonlinear magnetic resistance-enhanced magnetic sensor device and preparation method thereof
  • Nonlinear magnetic resistance-enhanced magnetic sensor device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The monocrystalline silicon chip of the thermal oxide layer with a thickness of 500nm is cleaned, and the strip-shaped MgO-CoFeB-Ta structure magnetic film material 12 ( figure 1 ), and deposit a layer of SiO on the outermost layer 2 as a protective layer. Then annealing is carried out at a certain temperature to achieve good vertical anisotropy. The method of ultrasonic pressure welding is used to draw four lead wires respectively on the four corners of the strip-shaped magnetic metal multilayer film. Finally, between electrodes 13 and 16 according to figure 1 A zener diode 11 is shown connected. So far, a nonlinear enhanced magnetoresistive magnetic sensor device 01 has been prepared.

[0034] The prepared magnetic thin film material 12 is structurally characterized by TEM (JEOL-2011), showing that it is a polycrystalline structure; figure 1 In the four-electrode method shown, Keithley2400 power meter 02 provides constant current from two electrodes 13 and 14 on ...

Embodiment 2

[0037] With the magnetic sensor device 01 of the nonlinear enhanced magnetoresistance prepared in the same method as in Example 1, and using the same magnetoelectric measurement method as in Example 1, at room temperature (300K), under the condition of a loading current of 13.4mA, change Magnetic field, to measure magnetoelectric transport properties. Here, the magnetoresistance is defined as MR(B)=[R(B)-R + / R + ]×100%, where R(B) and R+ Respectively represent the resistance value under the external magnetic field B and the positive saturation magnetic field when the current is 13.4mA. According to this definition, the maximum reluctance of this device can reach 23,000%, and the working magnetic field range can be between ±1mT (such as Figure 4 ). At the time of magnetic reversal, the maximum magnetic sensitivity reaches 1.7×10 5 % / mT (such as Figure 4 ), much higher than the existing magnetoresistive magnetic sensors.

Embodiment 3

[0039] On the basis of the non-linear enhanced magnetoresistance magnetic sensor device 01 in the first embodiment, the programmable magnetoelectric logic operation is realized by utilizing its special magnetoelectric symmetry through structural improvement.

[0040] Adopt the vertical magnetization magnetic thin film material 12 prepared by the same process as in Example 1, add Zener diode 11 and switch 18 between electrodes 13 and 16, add Zener diode 11 and switch 20 between electrodes 14 and 15 , the method of magnetoelectric measurement is the same as that of embodiment 1. So far, a programmable magnetoelectric logic device 04 based on a nonlinear enhanced magnetoresistive magnetic sensor device has been prepared ( Figure 5 ).

[0041] When the switch 18 is in the on state and the switch 20 is in the off state, we define it as configuration A, and the programmable magnetoelectric logic device 04 will degenerate into the nonlinear enhanced magnetoresistive magnetic sensor...

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Abstract

The invention discloses a nonlinear magnetic resistance-enhanced magnetic sensor device and a preparation method thereof. A semiconductor nonlinear unit and a magnetic unit are composited so as to form the device; since the semiconductor is nonlinear, resistance variation of fast high and low resistance state transition can be realized; an abnormal Hall effect in the magnetic unit makes the high and low resistance state variation to deviate, and therefore, abnormally huge magnetic resistance which is larger than 10<4>% can be obtained in a specific current interval; the abnormal Hall effect of the magnetic thin film material is very sensitive to a small magnetic field (~mT), and therefore, the device can generate huge magnetic resistance under a very small magnetic field, and the magnetic sensitivity of the device is higher than 10<5>% / mT; and the device also has special magnetic symmetry, and can be used for realizing programmable magnetoelectric logic operation. The device has the advantages of low cost, simple preparation process and excellent performance, and has great potential in the application to the magnetic electronic technical field in the future.

Description

technical field [0001] The invention belongs to the technical field of magnetoelectronic devices, and in particular relates to a magnetic sensor device with nonlinear enhanced magnetoresistance and a preparation method thereof. Background technique [0002] As the core of magnetic storage and magnetic sensing technology, magnetoresistance with significant effect and high magnetic field sensitivity (referred to as magnetoresistance) has broad application prospects in disk readout heads, electronic compasses, and moving parts monitoring. It has always been the goal pursued by the scientific and industrial circles. The current commercial magnetic sensor devices are mainly magnetic metal multilayer film materials based on GMR and TMR effects or semiconductor-based magnetoresistive elements. The former has better low magnetic field sensitivity, but due to the incompatibility between metal materials and mainstream semiconductor silicon materials and high process requirements, it ...

Claims

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Application Information

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IPC IPC(8): H01L43/12H01L43/08
Inventor 章晓中罗昭初熊成悦郭振刚陈娇娇
Owner TSINGHUA UNIV
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