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TMR (Tunneling magnetoresistance) accelerometer based on gap change

A technology of tunnel reluctance and accelerometer, which is applied in the direction of using inertial force for acceleration measurement, etc., can solve the problems of bulky micro accelerometers, changes in magnetic field, and low sensitivity, etc., to facilitate processing, small working magnetic field, and high sensitivity Effect

Active Publication Date: 2017-05-10
SOUTHEAST UNIV
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Problems solved by technology

[0004] Purpose of the invention: The present invention provides a tunnel magneto-resistance effect accelerometer device based on gap change. The external input acceleration causes the displacement of the mass block, resulting in a change in the magnetic field, and then uses the tunnel magneto-resistance effect to measure the change in the magnetic field to obtain the input acceleration. size, this technology solves the problems of existing miniature accelerometers such as bulky, low precision and low sensitivity

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  • TMR (Tunneling magnetoresistance) accelerometer based on gap change
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  • TMR (Tunneling magnetoresistance) accelerometer based on gap change

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[0038] In order to better understand the present invention, the content of the present invention is further illustrated below in conjunction with the examples, but the content of the present invention is not limited to the following examples.

[0039] Such as figure 1 and figure 2 As shown, a tunnel magnetoresistance effect accelerometer device based on gap change is formed by a top structure supported on the underlying structure by upper and lower first anchor points 3 and second anchor points 4, wherein the top structure is composed of masses 15, The excitation structure layer 19, the first elastic beam 17, the second elastic beam 18, the first feedback electrode 7, the third feedback electrode 9, the first gap adjustment electrode 11 and the third gap adjustment electrode 13; the underlying structure is composed of the first tunnel The magnetoresistance sensor 5 , the second tunnel magnetoresistance sensor 6 , the second feedback electrode 8 , the fourth feedback electrod...

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Abstract

The invention discloses a TMR accelerometer based on gap change. The accelerometer comprises a top structure, a bottom structure and first and second anchor points, and the top structure is supported over the bottom structure via the first and second anchor points arranged at the two ends of the bottom layer respectively. The accelerometer detects acceleration signals by utilizing a high-sensitivity TMR effect, has the advantages of low saturated magnetic field, small working magnetic field, high sensitivity, low temperature coefficient, large measuring bandwidth and the like, and is also simple and compact in structure, smaller in size and high in measuring precision.

Description

technical field [0001] The invention relates to a tunnel magnetoresistance effect accelerometer device based on gap change, which belongs to the technical field of micro-electromechanical systems and micro-inertial devices. Background technique [0002] Existing miniature accelerometers have problems such as bulky size, low measurement accuracy and low sensitivity. [0003] Tunneling magnetresistance accelerometer is mainly based on tunneling magnetresistance (TMR) to measure the input acceleration. The tunnel magnetoresistance effect mainly refers to the magnetic tunnel junction composed of two layers of ferromagnetic metals and an intermediate insulating layer. If the polarization directions of the two layers of ferromagnetic metals are parallel, the possibility of electron tunneling through the insulating layer will increase, and its macroscopic performance The resistance is small; if the polarization direction is antiparallel, the possibility of electron tunneling throu...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/12
CPCG01P15/12
Inventor 杨波王斌龙陆城富汪秋华吴磊胡迪
Owner SOUTHEAST UNIV
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