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Ag ALLOY FILM-FORMING SPUTTERING TARGET, Ag ALLOY FILM, Ag ALLOY REFLECTIVE FILM, Ag ALLOY ELECTROCONDUCTIVE FILM, Ag ALLOY SEMI-PERMEABLE FILM

A technology of alloy film and sputtering target, applied in sputtering coating, circuit, discharge tube, etc., can solve the deterioration of Ag film, insufficient salt water resistance, heat resistance, moisture resistance, and particle specific resistance. and other problems, to achieve various effects of excellent resistance

Active Publication Date: 2015-09-16
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] In addition, when an Ag film made of pure Ag is used as a wiring, there is a problem that particle growth occurs in a humid and hot environment and the specific resistance value fluctuates.
In addition, pure Ag does not have sufficient resistance to salt water, heat, and humidity, and this may lead to deterioration of the Ag film under the use environment or during the manufacturing process.

Method used

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  • Ag ALLOY FILM-FORMING SPUTTERING TARGET, Ag ALLOY FILM, Ag ALLOY REFLECTIVE FILM, Ag ALLOY ELECTROCONDUCTIVE FILM, Ag ALLOY SEMI-PERMEABLE FILM
  • Ag ALLOY FILM-FORMING SPUTTERING TARGET, Ag ALLOY FILM, Ag ALLOY REFLECTIVE FILM, Ag ALLOY ELECTROCONDUCTIVE FILM, Ag ALLOY SEMI-PERMEABLE FILM
  • Ag ALLOY FILM-FORMING SPUTTERING TARGET, Ag ALLOY FILM, Ag ALLOY REFLECTIVE FILM, Ag ALLOY ELECTROCONDUCTIVE FILM, Ag ALLOY SEMI-PERMEABLE FILM

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] Hereinafter, the results of evaluation tests for evaluating the effects of the sputtering target for forming an Ag alloy film and the Ag alloy film (Ag alloy reflective film) according to the present invention will be described.

[0067]

[0068] Ag with a purity of 99.9% by mass or more, Sb and Mg with a purity of 99.9% by mass or more were prepared as melting raw materials, and the amounts to obtain the predetermined composition shown in Table 1 were weighed.

[0069] Next, Ag was melted in an inert gas atmosphere in a melting furnace, and Sb and Mg were added to the obtained molten Ag, followed by melting in an inert gas atmosphere. After that, it was poured into a mold to manufacture an ingot having the composition shown in Table 1. More specifically, when melting Ag, the atmosphere was set to vacuum once (5×10 -2 Pa or less) and then carried out in an atmosphere replaced with Ar gas. Furthermore, Sb and Mg were added in an Ar gas atmosphere.

[0070] Next, aft...

Embodiment 2

[0101] Next, the results of evaluation tests for evaluating the effects of the sputtering target for forming an Ag alloy film and the Ag alloy film (Ag alloy conductive film) according to the present invention will be described.

[0102]

[0103] Ag with a purity of 99.9% by mass or more, Sb and Mg with a purity of 99.9% by mass or more were prepared as melting raw materials, and the amounts to obtain the predetermined composition shown in Table 4 were weighed.

[0104] Next, Ag was melted in an inert gas atmosphere in a melting furnace, and Sb and Mg were added to the obtained molten Ag, followed by melting in an inert gas atmosphere. After that, it was poured into a mold to manufacture an ingot having the composition shown in Table 4. More specifically, when melting Ag, the atmosphere was set to vacuum once (5×10 -2 Pa or less) and then carried out in an atmosphere replaced with Ar gas. Furthermore, Sb and Mg were added in an Ar gas atmosphere.

[0105] Next, after cold...

Embodiment 3

[0128] Next, the results of an evaluation test for evaluating the effect of the Ag alloy film (Ag alloy semitransparent film) formed using the sputtering target of Example 2 will be described.

[0129]

[0130] The above-mentioned sputtering target was installed in a sputtering device, and the distance from the glass substrate (eagle XG manufactured by Corning Incorporated): 70mm, power: DC 250W, ultimate vacuum: 5×10 -5 Pa, Ar gas pressure: Sputtering was performed under the condition of 0.6 Pa to prepare a sample having an Ag alloy film (Ag alloy semitransparent film) having a thickness shown in Table 5 formed on the surface of the glass substrate.

[0131] And, using the sputtering target of the said conventional example, the sample which formed the Ag film (Ag semitransparent film) which has the film thickness shown in Table 5 on the glass substrate was produced under the same conditions.

[0132] In addition, the measurement of the film thickness of the Ag alloy semitra...

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Abstract

The present invention pertains to an Ag alloy film-forming sputtering target, an Ag alloy film, an Ag alloy reflective film, an Ag alloy electroconductive film, and an Ag alloy semi-permeable film, the Ag alloy film-forming sputtering target being characterized in having a composition containing 0.2 atom% to 2.0 atom% of Sb and 0.05 atom% to 1.00 atom% of Mg, with the remainder made up by Ag and unavoidable impurities.

Description

technical field [0001] The invention relates to a sputtering target for forming an Ag alloy film for forming an Ag alloy film (Ag alloy reflective film, Ag alloy conductive film, Ag alloy translucent film), an Ag alloy film, an Ag alloy reflective film, and an Ag alloy conductive film. Ag alloy film, Ag alloy semi-transparent film, the Ag alloy film is used in light-emitting elements used in displays or lighting, light reflection layers such as optical recording optical discs, wiring such as touch panels, infrared blocking films, transparent conductive films, etc. . [0002] This application claims priority based on Japanese Patent Application No. 2013-010070 filed in Japan on January 23, 2013 and Japanese Patent Application No. 2014-004584 filed in Japan on January 14, 2014, and the contents thereof are incorporated herein . Background technique [0003] Generally, for the purpose of improving light extraction efficiency, a light reflection layer is formed on a display su...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22C5/06C22F1/00C22F1/14
CPCC23C14/14C22C5/06C22F1/14C23C14/3414H01J37/3429
Inventor 岁森悠人野中荘平
Owner MITSUBISHI MATERIALS CORP