Metal layer patterning method

Abstract

The invention provides a metal layer patterning method which is characterized by comprising the following steps: providing a projection wafer of which the upper surface is provided with a patterning hard mask layer, etching the projection wafer until through holes which penetrate through the upper surface and the lower surface of the projection wafer are formed, and preventing etching of the area without the through holes on the surface of the projection wafer; providing a device wafer, making the lower surface of the projection wafer which comprises the through holes of the pattern bond with the upper surface of the device wafer, thereby forming a bonding structure; depositing a material layer on the upper surface of the bonding structure; and stripping the projection wafer from the device wafer, thereby forming the device wafer of which the upper surface is provided with a patterned metal layer. The metal layer patterning method has functions of saving a photoresist peeling process in a process of forming the patterned metal layer on the surface of the wafer, furthermore realizing metal patterning at a high temperature, realizing simple process and greatly saving production cost.

Description

technical field [0001] The invention relates to the fields of integrated circuit manufacturing and microelectromechanical system processing, in particular to a method for patterning a metal layer on the surface of a wafer. Background technique [0002] The metal lift-off process is an important process step in the processing technology of electromechanical systems and integrated circuits. For example, to form a gold patterned metal layer on the surface of the wafer, the general conventional process is to use photoresist as a mask and use chemical agents to etch; the basic process flow is: (1) Figure 1a As shown, a patterned photomask 11 is formed on the surface of a device wafer 10; (2) and then as Figure 1b As shown, a metal layer 12 is simultaneously deposited on the device wafer 10 and the patterned photomask 11 on its surface; (3) as Figure 1c As shown, the conventional photoresist stripping technique is adopted to peel off the photomask pattern 11 from the device wa...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a metal layer patterning method, which is used to solve the problem of corrosion of the substrate caused by the etching solution forming the patterned metal layer in the prior art, the photolithography The problem of glue thickness limitation and the problem of maintaining low temperature during the etching process leads to the problem of rising costs

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