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Treatment method for surface of silicon wafer with abnormal polycrystalline silicon coating

A technology of silicon wafer surface and treatment method, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the abnormality of non-simple silicon nitride film, inability to flow normally, affecting the appearance and conversion of silicon wafers Efficiency and other issues, to ensure smooth progress and small suede damage

Inactive Publication Date: 2015-09-30
JILIN QINGDA NEW ENERGY ELECTRIC POWER
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  • Abstract
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  • Application Information

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Problems solved by technology

[0002] After plasma-enhanced chemical vapor deposition (PECVD), due to abnormal discharge and other uncertain factors, the non-simple silicon nitride film deposited on the surface of the silicon wafer is abnormal, and the silicon nitride film is red, yellow, and rainbow. Isochromatic aberration films affect the appearance and conversion efficiency of silicon wafers, and cannot flow into the next process normally

Method used

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  • Treatment method for surface of silicon wafer with abnormal polycrystalline silicon coating
  • Treatment method for surface of silicon wafer with abnormal polycrystalline silicon coating
  • Treatment method for surface of silicon wafer with abnormal polycrystalline silicon coating

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Embodiment Construction

[0011] attached figure 1 Shown is the appearance of an abnormal silicon wafer with a non-simple silicon nitride film deposited on the surface to be treated. In the figure, it can be clearly seen that area A is a normal area, and area B in the lower left corner is an abnormal silicon nitride film. The number of processed polysilicon wafers can be continuously produced to 300,000.

[0012] The processing method is as follows:

[0013] 1. Add 130 liters of pure water with a resistivity of 18 megohms into the acid treatment tank, and then add 24 liters of electronic grade (EL grade) hydrofluoric acid (HF) with a concentration of 49% to make the hydrofluoric acid (HF) The concentration reaches 7.6%. The temperature is controlled at room temperature 20-23°C, corroded for 15 minutes, then rinsed, and then dried. Treated polysilicon surface such as figure 2 As shown in the figure, it can be seen that the simple silicon nitride film has been removed, and there is still a litt...

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Abstract

The invention relates to a method for removing a silicon nitride film on the surface of a silicon wafer after abnormal coating for a crystalline silicon solar cell. The method comprises the two steps of hydrofluoric acid film removal and mixed acid treatment. The treatment method disclosed by the invention enables the silicon nitride film on the surface of the treated silicon wafer to be completely removed, without residues on the surface of the silicon wafer and with quite small damages on the textured surface of the silicon wafer, so that the advantages of facilitating one more time of texturing for the silicon wafer, ensuring the smooth performance of a production process, and the like are achieved.

Description

technical field [0001] The invention relates to a method for treating the surface of an abnormal silicon wafer with polysilicon coating in solar cell production, in particular to a method for removing a silicon nitride film on the surface of a silicon wafer after abnormal coating of a crystalline silicon solar cell. Background technique [0002] After plasma-enhanced chemical vapor deposition (PECVD for short), due to abnormal discharge and other uncertain factors, the non-simple silicon nitride film deposited on the surface of the silicon wafer is abnormal, and the silicon nitride film is red, yellow, and rainbow. Isochromatic aberration films affect the appearance and conversion efficiency of silicon wafers, and cannot flow into the next process normally. Therefore, it is necessary to remove the film for rework to ensure the smooth progress of the rework process. Contents of the invention [0003] The purpose of the present invention is to provide a method for treat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/02
CPCY02P70/50
Inventor 丁彦龙刘万学曲爽王月王磊李岩峰韩丽侯文会
Owner JILIN QINGDA NEW ENERGY ELECTRIC POWER