Unlock instant, AI-driven research and patent intelligence for your innovation.

A method and system for surface topography simulation

A surface topography and simulation technology, which is applied to the parts of grinding machine tools, the control of workpiece feed movement, and grinding machine tools, etc., can solve problems such as the inability to accurately predict the surface topography of wafers and the inability to accurately calculate the grinding removal rate.

Active Publication Date: 2017-03-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the surface topography of the wafer cannot be accurately predicted due to the inability to accurately calculate the grinding removal rate, and to provide a method and system for surface topography simulation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method and system for surface topography simulation
  • A method and system for surface topography simulation
  • A method and system for surface topography simulation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0052] Different from the prior art, the present invention adopts elastic mechanics to obtain the contact force between the wafer and the polishing pad by analyzing the force of the micro-element of the polishing pad. The basic laws followed by elastic mechanics are: deformation continuum law, stress-strain relationship and motion (balance) law. Among them, the deformation continuum law has two basic assumptions for elastic bodies: one is the continuum medium, and the other is the ideal Elasticity and elastic mechanics have a wider scope...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a surface topography simulation method and system. The method comprises the steps that (1) the elastic deformation quantity of a contact area between a wafer and a polishing pad is obtained in real time; (2) according to the elastic deformation quantity, contact force between the polishing pad and the wafer in the contact area is calculated; (3) the polishing removal rate of the surface of the wafer is calculated according to the contact force; (4) the surface topography of the wafer is updated according to the polishing removal rate; and the step (1) to the step (4) are executed repeatedly until a preset polishing effect is achieved. Due to the fact that a micro-unit stress analysis model is adopted, and elastic deformation of the polishing pad completely meets the elastic deformation conditions of the micro-unit stress analysis model, the accuracy of the obtained contact force of the wafer is guaranteed, and the polishing removal rate obtained according to the contact force of the wafer is more accurate. Meanwhile, the method is concise in calculation, and can be used for real-time prediction of the surface topography simulation of the wafer in the chemical mechanical polishing process.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method and system for simulating surface topography. Background technique [0002] The development of integrated circuit manufacturing technology in accordance with Moore's law, the continuous expansion of substrate size and the continuous reduction of chip feature size have brought new challenges to the design for manufacturability (DFM) method. The chemical mechanical planarization (CMP) method is a key link in the DFM process solution. [0003] The DFM method based on CMP process simulation mainly includes three steps: 1) Predict the grinding removal rate of the wafer through empirical formulas or theoretical models; 2) Make a difference between the height of the wafer surface topography and the grinding removal rate, and update the wafer in real time Surface topography; 3) Repeat step 1) and step 2) until the grinding is finished, give the real-time profile and f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50B24B37/005B24B49/00H01L21/66
CPCB24B37/005B24B49/006H01L22/12H01L22/26
Inventor 刘建云陈岚徐勤志
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI