Vertically stacked image sensor

Abstract

A vertically stacked image sensor having a photodiode chip and a transistor array chip. The photodiode chip includes at least one photodiode and a transfer gate extends vertically from a top surface of the photodiode chip. The image sensor further includes a transistor array chip stacked on top of the photodiode chip. The transistor array chip includes the control circuitry and storage nodes. The image sensor further includes a logic chip vertically stacked on the transistor array chip. The transfer gate communicates data from the at least one photodiode to the transistor array chip and the logic chip selectively activates the vertical transfer gate, the reset gate, the source follower gate, and the row select gate.

Description

[0001] Cross References to Related Applications

[0002] This Patent Cooperation Treaty patent application claims priority to U.S. nonprovisional patent application 13 / 756,459, filed January 31, 2013, and entitled "Vertically Stacked Image Sensor," the contents of which are incorporated herein by reference in their entirety . technical field

[0003] The present invention relates generally to electronic devices, and more particularly to image sensors for electronic devices. Background technique

[0004] Cameras and other image recording devices typically use one or more image sensors, such as Charge Coupled Device (CCD) sensors or Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. A typical CMOS image sensor may include a two-dimensional array of pixels, where each pixel may include a light detector, such as a photodiode, and one or more transistors that activate each pixel. The image sensor can be implemented in a rolling shutter configuration or a global shutt...

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