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Back electrode used for polyimide substrate copper indium gallium selenium thin film solar cell

A technology of solar cells and polyimide, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high stress between the back electrode and polyimide substrate, and achieve the effect of preventing abnormal curling and reducing stress

Inactive Publication Date: 2015-11-11
柳州蚊敌香业有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is how to overcome the defect of large stress between the back electrode of the copper indium gallium selenide thin film solar cell and the polyimide substrate

Method used

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  • Back electrode used for polyimide substrate copper indium gallium selenium thin film solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The invention provides a back electrode for a polyimide substrate 1 copper indium gallium selenium thin film solar cell, comprising a polyimide substrate 1, a stress buffer composite layer 3, a double-layer thick Mo thin film barrier layer, the The stress buffer composite layer 3 is formed on the polyimide substrate 1, and the double-thick Mo thin film barrier layer is formed on the stress buffer composite layer 3, and the stress buffer composite layer 3 is composed of Mo ultra-thin layer and Ag ultra-thin layer. The thin layer is repeatedly deposited and formed, the thickness of the Mo ultra-thin layer and the Ag ultra-thin layer are both 1nm, the repeated deposition times range is 20 times, and the double-layer thick Mo thin film barrier layer includes the first Mo thin film 4 and the second Mo thin film 4. Thin film 5 has a thickness of 100 nm and 600 nm, respectively.

[0021] Wherein, the barrier layer of the double-thick Mo thin film is a low-resistance residual c...

Embodiment 2

[0025] The invention provides a back electrode for a polyimide substrate 1 copper indium gallium selenium thin film solar cell, comprising a polyimide substrate 1, a stress buffer composite layer 3, a double-layer thick Mo thin film barrier layer, the The stress buffer composite layer 3 is formed on the polyimide substrate 1, and the double-thick Mo thin film barrier layer is formed on the stress buffer composite layer 3, and the stress buffer composite layer 3 is composed of Mo ultra-thin layer and Ag ultra-thin layer. The thin layer is repeatedly deposited and formed, the thickness of the Mo ultra-thin layer and the Ag ultra-thin layer are both 3nm, the repeated deposition times range is 35 times, and the double-layer thick Mo thin film barrier layer includes the first Mo thin film 4 and the second Mo thin film 4. Film 5 has a thickness of 150 nm and 650 nm, respectively.

[0026] Wherein, the barrier layer of the double-thick Mo thin film is a low-resistance residual compre...

Embodiment 3

[0030] The invention provides a back electrode for a polyimide substrate 1 copper indium gallium selenium thin film solar cell, comprising a polyimide substrate 1, a stress buffer composite layer 3, a double-layer thick Mo thin film barrier layer, the The stress buffer composite layer 3 is formed on the polyimide substrate 1, and the double-thick Mo thin film barrier layer is formed on the stress buffer composite layer 3, and the stress buffer composite layer 3 is composed of Mo ultra-thin layer and Ag ultra-thin layer. The thin layer is repeatedly deposited and formed, the thickness of the Mo ultra-thin layer and the Ag ultra-thin layer are both 5nm, the repeated deposition times range is 50 times, and the double-layer thick Mo thin film barrier layer includes the first Mo thin film 4 and the second Mo thin film 4. Film 5 has a thickness of 200 nm and 700 nm, respectively.

[0031] Wherein, the barrier layer of the double-thick Mo thin film is a low-resistance residual compre...

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Abstract

The present invention discloses a back electrode used for a polyimide substrate copper indium gallium selenium thin film solar cell. The back electrode comprises a polyimide substrate, a stress buffer composite layer, a double-layer thick Mo thin film barrier layer. The stress buffer composite layer is formed on the polyimide substrate double layer, the double-layer thick Mo thin film barrier layer is formed on the stress buffer composite layer, and the stress buffer composite layer is formed by depositing a Mo ultra thin layer and an Ag ultra thin layer repeatedly. The thickness ranges of the Mo ultra thin layer and the Ag ultra thin layer are both between 1 nm and 5 nm, and the range of the repeated deposition times is between 20 and 50. The double-layer thick Mo thin film barrier layer comprises a first Mo thin film and a second Mo thin film, and the thickness of the first Mo thin film is between 100 nm and 200 nm, and the thickness of the second Mo thin film is between 600 nm and 700 nm. According to the present invention, the stress buffer composite layer is formed by the repeated deposition of the Mo ultra thin layer and the Ag ultra thin layer, so that the stress between the back electrode of the copper indium gallium selenium thin film solar cell and the polyimide substrate is reduced effectively, and accordingly, the solar cell is prevented from crimping abnormally or the thin films are prevented from falling off.

Description

technical field [0001] The invention relates to the field of copper indium gallium selenide thin film solar cells, in particular to a back electrode for polyimide substrate copper indium gallium selenide thin film solar cells. Background technique [0002] Flexible substrate copper indium gallium selenide thin film solar cells have broad market prospects because of their foldability, mechanical properties, high mass-to-power ratio, and roll-to-roll process. The traditional back electrode structure uses Mo back electrodes, which can improve the back surface. Adhesion between the electrode and the substrate, while having good electrical properties to form a good ohmic contact with the CIGS absorber layer. For CIGS thin-film solar cells with polyimide substrates, due to the mismatch between polyimide and Mo thermal expansion absorption, the film stress is relatively large, which will lead to abnormal curling of solar cells, and in severe cases, the film will fall off. The curre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0445
CPCY02E10/50H01L31/022425
Inventor 徐伟明曹健
Owner 柳州蚊敌香业有限公司