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Back contact layer used for flexible substrate CIGS film solar battery

A technology for solar cells and flexible substrates, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as large stress on the back contact layer and flexible substrates, and achieve the effect of preventing abnormal curling or film peeling and reducing stress.

Active Publication Date: 2017-05-10
山东普华技术研究有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is how to overcome the defect of large stress between the back contact layer of the copper indium gallium selenium thin film solar cell and the flexible substrate

Method used

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  • Back contact layer used for flexible substrate CIGS film solar battery

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Experimental program
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Embodiment 1

[0020] The invention provides a back contact layer for a flexible substrate 1 copper indium gallium selenium thin film solar cell, comprising a flexible substrate 1, a stress buffer composite layer 3, a double-layer thick Pd thin film barrier layer, the stress buffer composite layer 3 is formed on the flexible substrate 1, the double-thick Pd thin film barrier layer is formed on the stress buffer composite layer 3, and the stress buffer composite layer 3 is formed by repeated deposition of Pd ultra-thin layer and Cu ultra-thin layer, the Both the Pd ultra-thin layer and the Cu ultra-thin layer have a thickness of 1 nm, the repeated deposition times range is 20 times, and the double-thick Pd thin film barrier layer includes a first Pd thin film 4 and a second Pd thin film 5 .

[0021] Wherein, the double-thick Pd film barrier layer is a low-resistance residual compressive stress Pd film. A metal Cr transition layer 2 is also formed on the flexible substrate 1 , and the thicknes...

Embodiment 2

[0025] The invention provides a back contact layer for a flexible substrate 1 copper indium gallium selenium thin film solar cell, comprising a flexible substrate 1, a stress buffer composite layer 3, a double-layer thick Pd thin film barrier layer, the stress buffer composite layer 3 is formed on the flexible substrate 1, the double-thick Pd thin film barrier layer is formed on the stress buffer composite layer 3, and the stress buffer composite layer 3 is formed by repeated deposition of Pd ultra-thin layer and Cu ultra-thin layer, the The thicknesses of the Pd ultra-thin layer and the Cu ultra-thin layer are both 3nm, and the repeated deposition times range is 35 times. The double-layer thick Pd thin film barrier layer includes the first Pd thin film 4 and the second Pd thin film 5, and the thicknesses are respectively 150nm and 650nm.

[0026] Wherein, the double-thick Pd film barrier layer is a low-resistance residual compressive stress Pd film. Al is also formed on the ...

Embodiment 3

[0030] The invention provides a back contact layer for a flexible substrate 1 copper indium gallium selenium thin film solar cell, comprising a flexible substrate 1, a stress buffer composite layer 3, a double-layer thick Pd thin film barrier layer, the stress buffer composite layer 3 is formed on the flexible substrate 1, the double-thick Pd thin film barrier layer is formed on the stress buffer composite layer 3, and the stress buffer composite layer 3 is formed by repeated deposition of Pd ultra-thin layer and Cu ultra-thin layer, the Both the Pd ultra-thin layer and the Cu ultra-thin layer have a thickness of 5 nm, and the repeated deposition times range is 50 times. The double-thick Pd thin film barrier layer includes a first Pd thin film 4 and a second Pd thin film 5 .

[0031] Wherein, the double-thick Pd film barrier layer is a low-resistance residual compressive stress Pd film. Al is also formed on the flexible substrate 1 2 o 3 transition layer 2, the Al 2 o 3 Th...

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Abstract

The invention discloses a back contact layer used for a flexible substrate CIGS (Cu-In-Ga-Se) film solar battery. The back contact layer includes a flexible substrate, a stress cushion composite layer and a double-layer thick Pd film barrier layer. The stress cushion composite layer is formed on a flexible substrate. The double-layer thick Pd film barrier layer is formed on the stress cushion composite layer. The stress cushion composite layer is formed through repeated deposition of Pd ultrathin layers and Cu ultrathin layers. The thickness range of the Pd ultrathin layers and the Cu ultrathin layers is 1 to 5mm. The range of repeated deposition number is 20 to 50. The double-layer thick Pd film barrier layer includes a first Pd film and a second Pd film and the thicknesses are 100 to 200 nm and 600 to 700 nm respectively. According to the invention, with the stress cushion composite layer formed through repeated deposition of the Pd ultrathin layers and the Cu ultrathin layers, the stress between the back contact layer of the CIGS film solar battery and the flexible substrate is reduced effectively, so that abnormal coiling or film falling of the solar battery is prevented.

Description

technical field [0001] The invention relates to the field of copper indium gallium selenide thin film solar cells, in particular to a back contact layer for a flexible substrate copper indium gallium selenide thin film solar cell. Background technique [0002] Flexible substrate copper indium gallium selenide thin film solar cells have broad market prospects because of their foldability, mechanical properties, high mass-to-power ratio, and roll-to-roll process. The traditional back contact layer structure uses Mo back contact layer, which can Improve the adhesion between the back contact layer and the substrate, and at the same time have good electrical properties to form a good ohmic contact with the CIGS absorber layer. For CIGS thin-film solar cells with flexible substrates, due to the mismatch between the thermal expansion and absorption of polyimide and Mo, the stress of the film is relatively large, which will lead to abnormal curling of the solar cell, and in severe c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032
CPCH01L31/0322Y02E10/541
Inventor 罗雷
Owner 山东普华技术研究有限公司