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Thin film transistor and pixel structure

A thin film transistor, recessed structure technology, applied in transistors, electric solid state devices, semiconductor devices and other directions

Inactive Publication Date: 2015-11-18
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a thin film transistor and a pixel structure, which can avoid the problem of leakage current that is easily generated by the semiconductor layer of traditional TFTs due to light irradiation

Method used

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  • Thin film transistor and pixel structure
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  • Thin film transistor and pixel structure

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Embodiment approach

[0039] The thin film transistor of the present invention can be applied to the pixel structure of the display panel. Therefore, in order to describe the design of the thin film transistor of the present invention in detail, the following description takes a single pixel structure with the thin film transistor of the present invention as an example. And with the accompanying drawings to illustrate.

[0040] Figure 1A to Figure 5A It is a schematic top view of the manufacturing process of a thin film transistor and a pixel structure having the thin film transistor according to an embodiment of the present invention. Figure 1B to Figure 5B respectively Figure 1A to Figure 5A The schematic diagram of the cross-sectional manufacturing process of the section line I-I'. The manufacturing process of the thin film transistor and the pixel structure of the present invention will be described in sequence below.

[0041] Please also refer to Figure 1A as well as Figure 1B , provid...

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Abstract

The invention relates to a thin film transistor and a pixel structure. The thin film transistor comprises a gate, a gate insulation layer, an active layer, an ohm contact layer, a source electrode, a drain electrode. The gate has a recess structure. The gate insulation layer is disposed on the gate and compliantly covers the recess structure. The active layer is disposed on the gate insulation layer, is disposed in the recess structure and doesn't extend out of the recess structure. The ohm contact layer is disposed on the active layer and partial active layer is exposed. The source electrode and the drain electrode is disposed on the ohm contact layer.

Description

【Technical field】 [0001] The present invention relates to a thin film transistor and a pixel structure, and in particular to a thin film transistor and a pixel structure of a display panel. 【Background technique】 [0002] With the advancement of modern information technology, displays of various specifications have been widely used in the screens of consumer electronic products, such as mobile phones, notebook computers, digital cameras, and personal digital assistants (PDAs). Among the multiple displays, liquid crystal displays (LCD) and organic electroluminescence displays (OELD or OLED) have become mainstream products in the market due to their advantages of thinness and low power consumption. The manufacturing process of LCD and OLED includes arranging an array of semiconductor elements on a substrate, and the semiconductor elements include thin film transistors (thinfilm transistors, TFTs). [0003] Traditionally, TFTs include top-gate TFTs and bottom-gate TFTs. The a...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L29/786
Inventor 蔡启南
Owner AU OPTRONICS CORP