Insulated Gate Bipolar Transistor Using Trench Gate Electrode
A bipolar transistor, insulated gate technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of IGBT on-state voltage reduction and hole density increase.
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no. 1 example
[0033] figure 1 It is a plan view of the semiconductor substrate 2 of the IGBT 30 of the first embodiment, figure 2 (1) in figure 1 The sectional view of the II-II line. exist figure 1 In , the range X represents a top view with the emitter and the interlayer insulating film removed, and the range Y represents a top view with the emitter removed. exist image 3 and Figure 5 The same is true in . The IGBT 30 includes: a semiconductor substrate 2 ; an emitter 24 formed on the front surface 2 a of the semiconductor substrate 2 ; and a collector electrode 26 formed on the back surface 2 b of the semiconductor substrate 2 . The emitter electrode 24 and the collector electrode 26 are formed of metal.
[0034] The following regions are formed on the semiconductor substrate 2 .
[0035] Emitter region 10 : formed at a position facing a partial range of surface 2 a of semiconductor substrate 2 . It is doped with n-type impurities at a high concentration, and is in ohmic cont...
no. 2 example
[0055] Only the differences from the first embodiment will be described below, and repeated descriptions will be omitted. The same applies to the third and subsequent embodiments.
[0056] Such as image 3 As shown, in the second embodiment, the emission region 10 is divided into two regions 10b, 10c by the body contact region 8 . Also in this case, the occurrence of the latch-up phenomenon can be prevented by forming the inner semiconductor region 6 .
no. 3 example
[0058] Such as Figure 5 As shown, in the third embodiment, the emission region 10 is divided into four regions 10d, 10e, 10f, 10g by the body contact region 8 . In this embodiment, four emission regions are formed to face the trench gate electrode 18 and supply electrons to the channel, so that the on-state voltage is low. Although the latch-up phenomenon is more likely to occur, the occurrence of the latch-up phenomenon can also be prevented by forming the inner semiconductor region 6 in this case.
[0059] (Example of curved trench gate electrode)
[0060] Figure 6 to Figure 14 An example of a curved trench gate electrode is illustrated. The positions indicated by the circle marks indicate the range located inside the bent portion. Occurrence of the latch-up phenomenon can be prevented by forming the inner semiconductor region 6 at the corner portion indicated by the circle mark. Figure 13 , 14 The reference number 18a is a dummy trench. Here, the dummy trench refe...
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