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A piezoresistive pressure sensor and its preparation method

A pressure sensor and piezoresistive technology, which is applied in the measurement of fluid pressure by changing ohmic resistance and the measurement of the property force of piezoresistive materials. It can solve problems such as poor biocompatibility and reduce transmission channels. , the effect of increasing the resistivity and improving the sensitivity

Active Publication Date: 2017-06-09
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the silicon-based piezoresistive pressure sensor with this structure is inflexible and has poor biocompatibility, which leads to the urgent need for the use of pressure sensors in many fields such as biomedicine and wearable devices.

Method used

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  • A piezoresistive pressure sensor and its preparation method
  • A piezoresistive pressure sensor and its preparation method
  • A piezoresistive pressure sensor and its preparation method

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Embodiment Construction

[0032] The technical solutions of the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0033] Such as figure 1 As shown, a piezoresistive pressure sensor according to an embodiment of the present invention includes an LCP substrate 1 , an LCP film layer 2 , a metal electrode 3 , a graphene film layer 4 and a graphene array layer 7 . The LCP thin film layer 2 is fixedly connected on the LCP substrate 1 , the LCP thin film layer 2 is provided with through holes in an array structure, and the metal electrodes 3 are connected above the two ends of the LCP thin film layer 2 . The graphene film layer 4 is connected on the LCP film layer 2, and the graphene film layer 4 fills the gap between the metal electrodes 3 and covers the metal electrodes 3. The graphene array layer 7 is filled in the through hole of the LCP film 2, and the graphene film layer 4 and the graphene array layer 7 are connected.

[0034] Liqui...

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Abstract

The invention discloses a piezoresistive pressure sensor and a preparation method thereof. The pressure sensor comprises an LCP substrate, an LCP thin film layer, a metal electrode, a graphene thin film layer and a graphene array layer; the LCP thin film layer is fixedly connected to the LCP substrate On the top, the LCP film layer is provided with through holes of an array structure, the metal electrodes are connected above both ends of the LCP film layer, the graphene film layer is connected on the LCP film layer, and the graphene film layer fills the gaps and gaps between the metal electrodes. The metal electrode is covered; the graphene array layer is filled in the through hole of the LCP film, and the graphene film layer and the graphene array layer are connected. The pressure sensor not only has the advantage that the substrate can be bent and deformed, but also has good sensitivity, and can be widely used in biomedicine, wearable devices and other fields.

Description

technical field [0001] The invention relates to a pressure sensor, in particular to a piezoresistive pressure sensor and a preparation method thereof. Background technique [0002] Traditional silicon-based pressure sensors are rarely used in many fields such as biomedicine due to the inflexibility of their substrates. At the same time, there is an urgent need for flexible substrate pressure sensors that can be bent and deformed for use in many fields. The structure of the existing silicon-based piezoresistive pressure sensor is to make four pressure-sensitive resistors in the stress concentration area by diffusion or ion implantation on a square or circular silicon strained film, and the four resistors are interconnected to form a Whiston bridge. Through the Wheatstone bridge, the change of the resistance value of the four pressure-sensitive resistors caused by the external pressure is converted into an output voltage, and the measurement of the pressure can be realized b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/18G01L9/06
Inventor 聂萌章丹黄庆安
Owner SOUTHEAST UNIV
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