Ray detector

Abstract

The embodiment of the invention provides a ray detector. The ray detector may comprise: a ray conversion layer, used for converting rays shot to the ray detector into visible light; a photoelectric conversion layer, used for receiving the visible light and converting the visible light into charge signals; a pixel array with a plurality of pixels, used for detecting the charge signals; and a substrate positioned below the photoelectric conversion layer and at least used for directly or indirectly bearing the photoelectric conversion layer, wherein the photoelectric conversion layer is made of a two-dimensional semiconductor material. The carrier mobility of the two-dimensional semiconductor material is relatively high, so that an external signal processing system can detect the charge signals more easily, and the rays can be detected by using a ray source with low energy. Thus, a ray detector with high sensitivity can be provided, so that the use cost of the ray detector is low and energy can be saved.

Description

technical field [0001] The invention relates to the technical field of radiation detection, in particular to a radiation detector. Background technique [0002] Radiation detectors are widely used in fields such as medicine, industrial production and manufacturing, for example, they can be used for physical examination, flaw detection of workpieces, etc. Modern radiation detection technology has been able to convert the radiation signal to be detected into an image or photo that can be directly displayed on the screen. [0003] However, existing radiation detectors usually use silicon-based PIN diodes as photosensitive elements, and the material of such silicon-based PIN diodes lacks toughness. Moreover, the carrier mobility of the silicon-based PIN diode is not high enough, and the sensitivity of the radiation detector formed in this way is not high enough, often resulting in the need for a very high-intensity radiation source, which makes the cost of using the radiation d...

AI Technical Summary

Problems solved by technology

[0003] However, the existing radiation detectors usually use silicon-based PIN diodes as photosensitive elements, and this silicon-based PIN diode material lacks toughness

Moreover, the carrier mobility of the silicon-based PIN diode is not high enough, and the sensitivity of the radiation detector formed in this way is not high enough, often resulting in the need for a very high-intensity radiation source, which makes the cost of using the radiation detector higher

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