A write circuit and memory

Abstract

The embodiment of the invention discloses a writing circuit and a memory. The write circuit in the embodiment of the present invention includes a control circuit, a write current generation module, a column gating circuit and a voltage detection module; the control circuit is connected to a memory controller and the write current generation module; the write current generation module is connected to the The voltage detection module, the column gating circuit and the storage array are respectively connected; the voltage detection module is also connected to the column gating circuit and the storage array respectively; the column gating circuit is also connected to the storage array and the storage array The control circuit is connected. The embodiments of the present invention improve the writing reliability and writing speed of the memory, and avoid the waste of writing power consumption.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a writing circuit and a memory. Background technique [0002] In recent years, with the continuous development of the second-generation spin transfer torque magnetic memory (English full name: Spin Transfer Torque Magnetic Random Access Memory, English abbreviation: STT-MRAM) technology, it has become more and more mature, and gradually began to for actual industrial production. [0003] The basic storage unit of STT-MRAM is mainly composed of a magnetic tunnel junction (English full name: Magnetic TunnelJunction, English abbreviation: MTJ) and an N-type metal oxide semiconductor transistor (English full name: N-Type-Metal-Oxide-Semiconductor-Transistor, The English abbreviation NMOS) is formed in series. The MTJ is mainly composed of three layers of thin films, that is, the upper and lower layers are ferromagnetic layers, and the middle is a tunneling layer. The magnetizat...

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Problems solved by technology

[0008] Although the use of a fixed long write current pulse can increase the probability of MTJ free layer magnetization direction reversal, due to the randomness of STT reversal, MTJ may undergo state reversal at any time within the write current pulse, that is, most MTJs will be in the write current state. The state reversal occurs within the pulse, which inevitably increases the write delay, which in turn causes waste of write power consumption

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