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Device structure and fabrication method of three-dimensional integrated circuit

A device structure and integrated circuit technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as limited capacitor area, capacitor storage capacity, internal resistance and other indicators that cannot meet device production requirements, etc.

Active Publication Date: 2019-02-15
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above problems, the present invention provides a three-dimensional integrated circuit device structure and its preparation method to solve the defects in the prior art that the capacitive area is limited, causing the capacity and internal resistance of the capacitor to store electric energy to fail to meet the production requirements of the device.

Method used

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  • Device structure and fabrication method of three-dimensional integrated circuit
  • Device structure and fabrication method of three-dimensional integrated circuit
  • Device structure and fabrication method of three-dimensional integrated circuit

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Embodiment Construction

[0046] The core idea of ​​the present invention is that circuit elements are arranged on the surface of the wafer backside in the non-device area.

[0047] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0048] Specifically, such as figure 1 The schematic diagram of the wafer bonding structure shown: the bonded wafer specifically includes a first wafer 1 and a second wafer 2, the first wafer 1 is located above the second wafer 2, and the front sides of the two wafers mutual bonding.

[0049] In an actual production process, a wafer surface provided with device structures is used as the front surface of the wafer and a back surface is set relative to the front surface. For details, reference may be made to the prior art.

[0050] In an embodiment of the present invention, the back side of the first wafer 1 or the back side of the second wafer 2 or ...

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Abstract

The present invention relates to the technical field of semiconductor manufacturing, in particular to a device structure of a three-dimensional integrated circuit and its preparation method. By setting a capacitor circuit element on the back surface of the wafer in the non-device area, the capacitor contacts most of the back surface of the wafer. Therefore, the area of ​​the prepared capacitor is relatively large, and the capacity of the capacitor to store electric energy, internal resistance and other indicators can meet the needs of device production. The design and distribution of other circuit components are affected.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a device structure of a three-dimensional integrated circuit and a preparation method thereof. Background technique [0002] Capacitors, inductors, and resistors are the most basic and important electronic components in electronic equipment, and are currently widely used in important fields such as computers, communications, transportation, and aviation. For example, in electronic devices such as timing, filtering, and coupling devices, capacitors can store and intensify electrical energy, so capacitors are increasingly concerned as a reliable energy storage device. [0003] With the advancement of science and technology and the improvement of social informatization, there will be a variety of capacitors to choose from in the design of semiconductor integrated circuits, including Metal-Oxide-Semiconductor (MOS) capacitors, polysilicon- Insulator-Polysilicon (...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L23/64H01L21/02
Inventor 朱继锋梅绍宁鞠韶复
Owner WUHAN XINXIN SEMICON MFG CO LTD