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Method for determining two-dimensional geometry relationship of crystal reciprocal vector in EBSD pattern

一种倒易矢量、几何关系的技术,应用在确定电子背散射衍射花样中晶体倒易矢量的二维几何关系领域,能够解决测量数据误差大、二维倒易面不能直接反映几何关系等问题

Inactive Publication Date: 2015-12-09
EAST CHINA JIAOTONG UNIVERSITY
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Problems solved by technology

Before 3D reconstruction, each 2D reciprocal surface needs to be determined from the EBSD pattern, especially the 2D geometric relationship of the crystal reciprocal vector on the reciprocal surface needs to be correctly described. The correct geometric relationship is the key to realize 3D reconstruction. However, due to the large error of the original EBSD measurement data, even after geometric correction, the vector distribution on the two-dimensional reciprocal surface cannot directly reflect its inherent geometric relationship

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  • Method for determining two-dimensional geometry relationship of crystal reciprocal vector in EBSD pattern
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  • Method for determining two-dimensional geometry relationship of crystal reciprocal vector in EBSD pattern

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[0037] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0038] step 1), figure 1 is a schematic diagram of scanning electron microscope (SEM) and electron backscatter diffraction (EBSD), where point O is the pattern center (PC) of EBSD, point O' is the signal source, and probe distance (DD) is the ratio of L to EBSD image width .

[0039] figure 2 It is the EBSD pattern collected on a certain ore, the image width is 237.1mm, the black cross in the figure is the position of PC, the DD value is 0.6001, the accelerating voltage U=15kV,

[0040] electron beam wavelength λ = 1.5 U ( 1 + 0.9788 × ...

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Abstract

The present invention discloses a method for determining the two-dimensional geometry relationship of crystal reciprocal vectors in EBSD pattern. The method comprises: using the pattern center PC and the probe distance DD to geometrically correct a Kikuchi band so as to obtain the reciprocal vectors corresponding to the Kikuchi band; selecting a group of the reciprocal vectors having the smallest parallelogram area on the reciprocal surface as two-dimensional base vectors so as to form grid, and marking the two-dimensional base vectors; calibrating the integer coordinates of the rest reciprocal vectors on the surface relative to the two-dimensional base vectors, obtaining the deviation values between the integer coordinates and the adjacent grid nodes, and marking the integer coordinate having the smallest deviation value; using the marked reciprocal vectors and the integer coordinates relative to the two-dimensional base vectors to fit the length and the included angle of the two-dimensional base vector, and using the fitting result to redefine the two-dimensional grid; and repeating the steps until all reciprocal vectors on the reciprocal surface are marked, wherein the integer coordinate of the reciprocal vector on the surface relative to the two-dimensional base vector discloses the two-dimensional geometry relationship of the reciprocal vector.

Description

technical field [0001] The invention relates to the technical field of material microstructure characterization and crystal structure analysis. Specifically, the invention relates to a method for determining the two-dimensional geometric relationship of crystal reciprocal vectors in electron backscatter diffraction (EBSD) patterns. Background technique [0002] Most of the materials currently used are crystalline materials. The conventional methods for determining the unknown lattice of crystals mainly include X-ray diffraction (XRD) and selected area electron diffraction (SAED). These two classical methods have their own advantages and disadvantages. The parameter accuracy is high, and the atomic coordinates in the unit cell can be further precisely positioned by using its diffraction intensity information, but the microstructure morphology inside the sample cannot be observed in real time, and the sample is usually required to be a single composition phase; the latter allow...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/203
CPCG01N2223/418G01N2223/606G01N23/203G01N23/207
Inventor 韩明李丽丽罗红林熊光耀万怡灶
Owner EAST CHINA JIAOTONG UNIVERSITY
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