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Film forming device

A technology of a film forming device and a mounting table, which is applied in the field of bellows and can solve the problems of not disclosing the specific structure of the partition wall

Active Publication Date: 2017-06-27
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Cited Document 1 does not disclose the specific structure of the partition wall that holds the substrate holding table rotatably and vertically movable, and that separates the space in the processing container from the space in the bellows.

Method used

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Examples

Experimental program
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Embodiment Construction

[0040] refer to figure 1 The configuration of the film forming apparatus according to the embodiment of the present invention will be described. This film forming apparatus is constituted as an apparatus for alternately supplying titanium tetrachloride (TiCl 4 ) gas (raw material gas) and ammonia (NH 3 ) (nitridation gas) and use the ALD method to form a titanium nitride (TiN) film.

[0041] Such as figure 1 As shown, the film forming apparatus includes: a processing container 1, which is a vacuum container made of metal such as aluminum and having a substantially circular shape in plan view, for performing film forming processing on a wafer W; Inside the processing container 1 , a wafer W is placed; and a top plate portion 31 is provided so as to face the mounting table 2 to form a processing space 312 between the mounting table 2 . An input and output port 11 and a gate valve 12 are provided on the side of the processing container 1. The input and output port 11 is use...

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PUM

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Abstract

A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.

Description

technical field [0001] The present invention relates to a technique for suppressing a reaction gas from reaching a bellows provided in a lower portion of a processing container for forming a film on a substrate. Background technique [0002] As a method of forming a film on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"), methods called CVD (Chemical Vapor Deposition: Chemical Vapor Deposition) and ALD (Atomic Layer Deposition: Atomic Layer Deposition) are known. ) method, MLD (Multi Layer Deposition: multi-layer deposition) method (hereinafter, the atomic layer deposition method and multi-layer deposition method are collectively referred to as the ALD method), and in the CVD method, the wafer is arranged in a vacuum atmosphere In the processing container, reaction gases are reacted on the surface of the wafer to accumulate deposits. In the ALD method and MLD, various reaction gases that react with each other are sequentially supplied to the wa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44H01L21/31
CPCC23C16/4408C23C16/34C23C16/4405C23C16/4409C23C16/4412C23C16/45544C23C16/4583H01L21/68742H01L21/68792
Inventor 成嶋健索鸟屋大辅朝仓贤太朗村上诚志
Owner TOKYO ELECTRON LTD