Visible-light infrared mixed imaging detector pixel structure and manufacturing method thereof

An imaging detector and pixel structure technology, applied in the field of microelectronics, can solve the problems affecting the imaging quality, the large alignment deviation of the infrared image part and the visible light image part, etc., so as to improve the imaging quality, improve the light utilization rate and reduce the loss Effect

Active Publication Date: 2016-01-13
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

[0003] However, in the existing hybrid imaging devices, lenses are used to form two optical paths to sense and image visible light and infrared light respectively, and finally a computer processing system is used to synthesize them together. Due to the separation of the optical paths, the formed infrared image part and visible light image Some of them have large alignment deviations, which seriously affect the imaging quality

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  • Visible-light infrared mixed imaging detector pixel structure and manufacturing method thereof
  • Visible-light infrared mixed imaging detector pixel structure and manufacturing method thereof

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Embodiment Construction

[0046] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0047] The pixel structure of the visible-infrared hybrid imaging detector of the present invention includes: a wafer used as a filter layer for filtering out visible light, near-infrared light and mid-infrared light; a visible light sensing area located on the lower surface of the wafer, which includes The visible light sensing part and the first lead-out pole that outputs the electrical signal formed by the visible light sensing part; the external circuit on the lower surface of the wafer located outside the edge of the visible light sensing area, and the infrared...

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Abstract

The invention provides a visible-light infrared mixed imaging detector pixel structure and a manufacturing method thereof. The structure comprises a wafer served as a light filtering layer, a visible light sensing area, an external-connection circuit, a dielectric layer and an infrared sensing area. The infrared sensing area comprises an infrared sensing component, an electrode layer, an upper release protection layer; a plurality of through holes, a support component and a seal-capping material layer, wherein a release protection layer bottom located in an electrode layer pattern is contacted with an infrared sensing component top and a contact portion possesses a first release hole; a first cavity is located below the first release hole; the plurality of through holes are located below an edge of the electrode layer; a dielectric layer of a through hole outer side possesses a second release hole; a second cavity is located below the second release hole; a top of the support component possesses a third release hole, an internal surface of the support component possesses an infrared reflective material or the whole support component is the infrared reflective material; and a third cavity is located between the support component and the infrared sensing area.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a visible-infrared hybrid imaging detector pixel structure and a preparation method thereof. Background technique [0002] With the development of industry and living standards, pure infrared imaging or pure visible light imaging can no longer meet the demand. Imaging technologies with wider wavelength bands have attracted more and more attention, especially imaging technologies that are sensitive to visible light and infrared light at the same time. [0003] However, in existing hybrid imaging devices, lenses are used to form two optical paths to sense and image visible light and infrared light respectively, and finally a computer processing system is used to synthesize them together. Due to the separation of the optical paths, the formed infrared image part and visible light image Some of them have large alignment deviations, which seriously affect the imaging quality....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/146
Inventor 康晓旭陈寿面
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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