The invention discloses a visible light-
infrared compatible stealth ITO film and a preparation method thereof, and relates to the technical field of ITO transparent conductive film materials. The preparation method comprises the following steps: (1)
sputtering at an initial section; (2)
sputtering a transition section; (3)
sputtering at a termination section; and (4) carrying out segmented annealing treatment. According to the method, the
hydrogen-
argon mixed
atmosphere is dynamically regulated and controlled, and the sectional annealing process is adopted, so that the collaborative optimization of the ITO thin film in three aspects of
sheet resistance, visible light
transmittance and
infrared reflectivity is realized. A gradient sputtering strategy of
hydrogen concentration from high to low is adopted, a segmented annealing process is combined, a gradient distribution structure of which the carrier concentration is gradually reduced from a substrate to the surface is realized in a single-layer thin film, and the structure enables the bottom of the thin film to have high carrier concentration and guarantees low
sheet resistance and high
infrared reflection; the surface defect concentration is low, and high visible light
transmittance is guaranteed. The
sheet resistance of the thin film is lower than 5
omega / sq, the average
transmittance of the thin film in the visible
light wave band of 400-800 nm is higher than 80%, and the average
reflectivity of the thin film in the infrared
atmosphere window
wave band of 8-14 microns is higher than 85%.