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58 results about "Visible light sensing" patented technology

Double-inductor infrared camera and control method thereof

The invention discloses a double-inductor infrared camera and a control method thereof. The double-inductor infrared camera comprises a lens group, a semi-reflecting semi-permeating lens, a visible light inductor, an infrared inductor, a control module, a visible light filter, an infrared light filter, a memorizer and a luminance inductor. The invention further discloses a double-inductor infrared camera control method which comprises the following steps: (1) acquiring ambient light illumination A; (2) judging whether the ambient light illumination A is larger than a given threshold A0, entering the step (3) if the ambient light illumination is larger than the given threshold A0, and entering the step (4) if the ambient light illumination is not larger than the given threshold A0; (3) closing the infrared inductor, and opening the visible light inductor; (4) closing the visible light inductor, and opening the infrared inductor. According to the double-inductor infrared camera and the control method, a semi-reflecting semi-permeating structure is applied in the infrared camera to achieve uniformity of monitoring visual fields; and a double-inductor structure is adopted, two inductors are driven through switching and are enabled to work in an intersection mode so that intersected receiving of visible light and infrared light images is realized, and complex calculation processes brought by simultaneous receiving of two kinds of light are avoided.
Owner:TIANJIN SAMSUNG OPTO ELECTRONICS +1

Photoelectric conversion circuit used for visible light sensor

The invention discloses a photoelectric conversion circuit used for a visible light sensor chip. The photoelectric conversion circuit mainly solves the problem that in the prior art, visible light sensing accuracy is influenced by dark current noise. The photoelectric conversion circuit comprises a photoelectric diode array (1), a dark current photoelectric diode array (2) and a noise filtering circuit (3). The number of diodes, connected into the circuit actually, of the photoelectric diode array and the number of diodes, connected into the circuit actually, of the dark current photoelectric diode array are controlled through external control logic. The first input end of the noise filtering circuit is connected with the output end of the photoelectric diode array, the second input end of the noise filtering circuit is connected with the output end of the dark current photoelectric diode array, subtraction is performed on light currents generated by the photoelectric diode array and containing dark currents and dark currents generated by the dark current photoelectric diode array through the noise filtering circuit so as to obtain visible light currents without the dark currents, and the visible light currents are output to an external charge balance type analog-to-digital conversion circuit. The photoelectric conversion circuit improves the photoelectric conversion accuracy, restrains influences on visible light sensing results of the dark current noise, and improves the visible light sensing accuracy.
Owner:XIDIAN UNIV

Image sensor, depth data measuring head and depth data measuring system

The invention discloses an image sensor, a depth data measuring head provided with the image sensor and a depth data measuring system provided with the image sensor. The image sensor comprises a lensunit, a beam splitting device, a visible light sensing unit and an infrared light sensing unit, wherein the lens unit is used for receiving an incident light; the beam splitting device is used for splitting the incident light into a visible light beam and an infrared light beam; the visible light sensing unit is used for detecting a visible light within a special visible light frequency range fromthe visible light beam; and the infrared light sensing unit is used for detecting an infrared light within a special infrared light frequency range from the infrared light beam. With the introduced beam splitting device, particularly a square prism for reflecting the infrared light, the image sensor provided by the invention can realize separation of an infrared light constituent and a visible light constituent and pixel-level alignment of imaging through very simple setting. The image sensor can be used in various monocular and binocular measuring heads, and can preferably cooperate with a visible light protection device to improve window matching accuracy through multiple sets of projected textures.
Owner:SHANGHAI TUYANG INFORMATION TECH CO LTD

Pixel structure of dual-layer visible/infrared hybrid imaging detector and fabrication method of pixel structure

The invention provides a pixel structure of a dual-layer visible/infrared hybrid imaging detector and a fabrication method of the pixel structure. The pixel structure comprises a substrate, a visible sensing region, a metal interconnector and an infrared sensing region, wherein the visible sensing region is arranged on the lower surface of the substrate, the infrared sensing region is arranged on the upper surface of the substrate and comprises a first infrared sensing structure, a second infrared sensing structure, a contact groove structure, a support part and a dielectric layer, the first infrared sensing structure is arranged on the dielectric layer, the first infrared sensing structure and the second infrared sensing structure both are connected with the contact groove structure, the contact groove structure is connected with the metal interconnector, an electric signal formed by the first infrared sensing structure and the second sensing structure is transmitted to the metal interconnector through the contact groove structure, a first cavity is arranged in the substrate below the first infrared sensing structure, a second cavity is arranged between the second infrared sensing structure and the first infrared sensing structure, a third cavity is arranged between the support part and the second infrared sensing structure, and a fourth cavity is arranged in the substrate below the dielectric layer provided with a fourth releasing hole.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT

Visible-light infrared mixed imaging detector pixel structure and manufacturing method thereof

The invention provides a visible-light infrared mixed imaging detector pixel structure and a manufacturing method thereof. The structure comprises a wafer served as a light filtering layer, a visible light sensing area, an external-connection circuit, a dielectric layer and an infrared sensing area. The infrared sensing area comprises an infrared sensing component, an electrode layer, an upper release protection layer; a plurality of through holes, a support component and a seal-capping material layer, wherein a release protection layer bottom located in an electrode layer pattern is contacted with an infrared sensing component top and a contact portion possesses a first release hole; a first cavity is located below the first release hole; the plurality of through holes are located below an edge of the electrode layer; a dielectric layer of a through hole outer side possesses a second release hole; a second cavity is located below the second release hole; a top of the support component possesses a third release hole, an internal surface of the support component possesses an infrared reflective material or the whole support component is the infrared reflective material; and a third cavity is located between the support component and the infrared sensing area.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT

Adjustable hybrid imaging detector pixel structure and preparation method thereof

The invention provides an adjustable hybrid imaging detector pixel structure and a preparation method thereof. According to the adjustable hybrid imaging detector pixel structure and the preparation method thereof of the invention, a visible light induction region and an infrared induction region are integrated in a chip; the infrared induction region includes an infrared window material which is located at the upper surface of a semiconductor substrate and is used for selectively transmitting infrared light of desired bands, interconnection layers which are arranged at two sides of the infrared window material and are located at the upper surface of the semiconductor substrate, a dielectric layer which is located at the upper surfaces of the infrared window material and the interconnection layers, an infrared induction structure which is provided with a first middle arching part and first end portion supporting parts, and a supporting component which is arranged around the infrared induction structure; contact trench structures located at two sides above the infrared window material are formed in the dielectric layer; the first middle arching part is located a corresponding position just above the infrared window material; a first cavity is formed between the first middle arching part and the dielectric layer; and the electrode layers of the first end portion supporting parts contact with the contact trench structures.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT

Illumination control system based on photosynthetically effective value sensor

The invention relates to an illumination control system based on a photosynthetically effective value sensor, and the system comprises a sensor module; a control center which is used for receiving a photosynthetically effective radiation value and generating and transmitting a lamp control signal according to the photosynthetically effective radiation value; and a lamp which receives the lamp control signal and illuminates according to the lamp control signal. The sensor module comprises a visible light sensing unit which is used for converting the collected light with a wavelength range of 400 nm and 700 nm into an electric signal; a micro-control unit which is connected with the visible light sensing unit and is used for calculating a photosynthetically active radiation value according to the electric signal; and a wireless transmission unit which is connected with the micro-control unit and is used for wirelessly transmitting the photosynthetically active radiation value. Accordingto the present invention, the illumination of the lamp is controlled by sensing the photosynthetically active radiation value within the optical wavelength range of 400nm-700nm required by the photosynthetic reaction of the plants, so that the closed-loop control of the illumination condition required by the growth of the plants is realized, and the illumination condition really required by the growth of the plants can be provided.
Owner:SHENZHEN LONGOOD INTELLIGENT ELECTRIC

Dual-layer hybrid imaging detector pixel structure capable of increasing transmissivity and preparation method thereof

The invention provides a dual-layer hybrid imaging detector pixel structure capable of increasing transmissivity and a preparation method thereof. The dual-layer hybrid imaging detector pixel structure comprises a substrate, a visible light induction region located at the lower surface of the substrate, a metal interconnection structure and an infrared induction region located at the upper surface of the substrate; the infrared induction region includes a first infrared induction structure, a second infrared induction structure, a contact trench structure, a supporting component and a dielectric layer; the first infrared induction structure and the second infrared induction structure are both connected with the contact trench structure; the contact trench structure is connected with the metal interconnection structure; electric signals formed by the first infrared induction structure and the second infrared induction structure are transmitted to the metal interconnection structure through the contact trench structure; a first cavity located below the first infrared induction structure is formed in the substrate; a second cavity is formed between the second infrared induction structure and the first infrared induction structure; a third cavity is formed between the supporting component and the second infrared induction structure; first release holes are formed in the first infrared induction structure; and second release holes are formed at the top of the supporting component.
Owner:SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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