The invention relates to a CIS device and a manufacturing method thereof. The CIS device comprises a stacked substrate structure, the stacked substrate structure comprises a first pixel substrate and a second pixel substrate which are bonded with each other in the vertical direction, and at least one visible light pixel unit and at least one
infrared light pixel unit are distributed on the stacked substrate structure in a non-overlapping mode in the transverse direction. The visible light pixel unit comprises a
visible light sensing element formed in the first pixel substrate, and the
infrared light pixel unit comprises an
infrared light sensing element formed in the second pixel substrate. The
visible light sensing element and the infrared
light sensing element are respectively used for sensing visible light and infrared light which are incident from one side, far away from the second pixel substrate, of the first pixel substrate, and compared with a visible light pixel unit, an incident
light signal of the infrared light pixel unit passes through a longer
optical path before being detected, so that the infrared response capability is enhanced, and the detection efficiency is improved. And meanwhile, the incident
light signal of the visible light pixel unit is short in
optical path and low in depletion layer depth before being detected, so that the
crosstalk risk between adjacent pixel units is low.